C3M0075120K, Транзистор N-MOSFET, полевой, 1,2кВ, 30А, 113,6Вт, TO247-4
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8070125192
- Артикул
- C3M0075120K
- Бренд
- WOLFSPEED
- Tab
- Tab
- PPAP
- Unknown
- Width
- 5.21mm
- Material
- SiC
Цена по запросу
(от 2 634,88 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Компания Wolfspeed укрепляет свое лидерство в области теxнологии SiC, внедряя передовую теxнологию SiC MOSFET в новой дискретной упаковке с низкой индуктивностью.
Технические параметры
| Tab | Tab |
| PPAP | Unknown |
| Width | 5.21mm |
| Material | SiC |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Packaging | Tube |
| Pin Count | 4 |
| Automotive | Unknown |
| Lead Shape | Through Hole |
| Вес, г | 6 |
| PCB changed | 4 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | TO-247-4 |
| Configuration | Single Dual Source |
| Mounting Type | Through Hole |
| Product Category | Power MOSFET |
| Supplier Package | TO-247 |
| Maximum IDSS (uA) | 50 |
| Process Technology | C3M |
| Transistor Material | SiC |
| Standard Package Name | TO |
| Typical Fall Time (ns) | 10 |
| Typical Rise Time (ns) | 14 |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 113.6 W |
| Typical Gate Charge @ Vgs | 53 nC @ 4/15V |
| Supplier Temperature Grade | Industrial |
| Maximum Gate Source Voltage | -8 V, 19 V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 1200 V |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Maximum Gate Threshold Voltage | 3.6V |
| Maximum Power Dissipation (mW) | 113600 |
| Minimum Gate Threshold Voltage | 1.8V |
| Typical Gate Charge @ Vgs (nC) | 53@15V |
| Maximum Drain Source Resistance | 75 mΩ |
| Maximum Gate Source Voltage (V) | 15 |
| Typical Output Capacitance (pF) | 58 |
| Typical Turn-On Delay Time (ns) | 30 |
| Maximum Continuous Drain Current | 30 A |
| Maximum Drain Source Voltage (V) | 1200 |
| Typical Gate Plateau Voltage (V) | 7.5 |
| Typical Turn-Off Delay Time (ns) | 38 |
| Typical Diode Forward Voltage (V) | 4.5 |
| Typical Gate to Drain Charge (nC) | 18 |
| Maximum Gate Threshold Voltage (V) | 3.6 |
| Minimum Gate Threshold Voltage (V) | 1.8 |
| Typical Gate Threshold Voltage (V) | 2.5 |
| Typical Gate to Source Charge (nC) | 17 |
| Typical Reverse Recovery Time (ns) | 20 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 32 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 1390@1000V |
| Typical Reverse Recovery Charge (nC) | 254 |
| Maximum Drain Source Resistance (mOhm) | 90@15V |
| Maximum Gate Source Leakage Current (nA) | 250 |
| Maximum Positive Gate Source Voltage (V) | 15 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 123 |
| Typical Drain Source Resistance @ 25°C (mOhm) | 75@15V |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 2@1000V |