C3M0032120K,Silicon Carbide MOSFET, Single, N Channel, 63 A, 1.2 kV, 0.032 ohm, TO-247
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- Код товара
- 8001751406
- Артикул
- C3M0032120K
- Бренд
- WOLFSPEED
- Tab
- Tab
- PPAP
- Unknown
- Width
- 5.21mm
- Brand:
- Wolfspeed
Цена по запросу
(от 6 610 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Полярность транзистора: N-канальный; Постоянный ток стока Id: 63 А; Напряжение источника стока Vds: 1,2 кВ; Сопротивление включения Rds (вкл.): 0,032 Ом; Испытательное напряжение Rds (вкл.) Vgs: 15 В; Пороговое напряжение Vgs: 2,5 В;
Технические параметры
| Tab | Tab |
| PPAP | Unknown |
| Width | 5.21mm |
| Brand: | Wolfspeed |
| EU RoHS | Compliant with Exemption |
| Material | SiC |
| Mounting | Through Hole |
| Product: | MOSFET |
| ECCN (US) | EAR99 |
| Packaging | Tube |
| Pin Count | 4 |
| Automotive | Unknown |
| Fall Time: | 9 ns |
| Lead Shape | Through Hole |
| Packaging: | Tube |
| Rise Time: | 18 ns |
| Вес, г | 8.673 |
| No. of Pins | 4Pins |
| PCB changed | 4 |
| Part Status | Active |
| Technology: | SiC |
| Channel Mode | Enhancement |
| Channel Type | N Channel |
| Package Type | TO-247-4 |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Single Dual Source |
| Manufacturer: | Wolfspeed |
| Mounting Type | Through Hole |
| Product Range | C3M |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Package / Case: | TO-247-4 |
| Product Category | Power MOSFET |
| Supplier Package | TO-247 |
| Transistor Type: | 1 N-Channel |
| Maximum IDSS (uA) | 50 |
| Power Dissipation | 283W |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 118 nC |
| Process Technology | C3M |
| Number of Channels: | 1 Channel |
| Transistor Material | SiC |
| Rds(on) Test Voltage | 15V |
| Transistor Polarity: | N-Channel |
| Standard Package Name | TO |
| Transistor Case Style | TO-247 |
| Typical Fall Time (ns) | 9 |
| Typical Rise Time (ns) | 18 |
| Pd - Power Dissipation: | 283 W |
| Drain Source Voltage Vds | 1.2kV |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 283 W |
| Operating Temperature Max | 175°C |
| Typical Gate Charge @ Vgs | 118 nC @ 4/15V |
| Vgs - Gate-Source Voltage: | -4 V, +15 V |
| Continuous Drain Current Id | 63A |
| MOSFET Module Configuration | Single |
| Maximum Gate Source Voltage | -8 V, 19 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 25 ns |
| Maximum Drain Source Voltage | 1200 V |
| Typical Turn-Off Delay Time: | 32 ns |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -40 °C |
| Id - Continuous Drain Current: | 63 A |
| Maximum Gate Threshold Voltage | 3.6V |
| Maximum Operating Temperature: | +175 C |
| Maximum Power Dissipation (mW) | 283000 |
| Minimum Gate Threshold Voltage | 1.8V |
| Minimum Operating Temperature: | -40 C |
| Typical Gate Charge @ Vgs (nC) | 118@15V |
| Forward Transconductance - Min: | 27 S |
| Maximum Drain Source Resistance | 32 mΩ |
| Maximum Gate Source Voltage (V) | 15 |
| Typical Output Capacitance (pF) | 129 |
| Typical Turn-On Delay Time (ns) | 25 |
| Drain Source On State Resistance | 0.032ohm |
| Maximum Continuous Drain Current | 63 A |
| Maximum Drain Source Voltage (V) | 1200 |
| Typical Gate Plateau Voltage (V) | 6.5 |
| Typical Turn-Off Delay Time (ns) | 32 |
| Gate Source Threshold Voltage Max | 2.5V |
| Rds On - Drain-Source Resistance: | 32 mOhms |
| Typical Diode Forward Voltage (V) | 4.6 |
| Typical Gate to Drain Charge (nC) | 34 |
| Maximum Gate Threshold Voltage (V) | 3.6 |
| Minimum Gate Threshold Voltage (V) | 1.8 |
| Typical Gate Threshold Voltage (V) | 2.5 |
| Typical Gate to Source Charge (nC) | 40 |
| Typical Reverse Recovery Time (ns) | 27 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Continuous Drain Current (A) | 63 |
| Operating Junction Temperature (°C) | -40 to 175 |
| Typical Input Capacitance @ Vds (pF) | 3357@1000V |
| Typical Reverse Recovery Charge (nC) | 478 |
| Vds - Drain-Source Breakdown Voltage: | 1.2 kV |
| Maximum Drain Source Resistance (mOhm) | 43@15V |
| Vgs th - Gate-Source Threshold Voltage: | 3.6 V |
| Maximum Gate Source Leakage Current (nA) | 250 |
| Maximum Positive Gate Source Voltage (V) | 15 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 120 |
| Factory Pack Quantity: Factory Pack Quantity: | 30 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 8@1000V |