C3M0025065D, SiC MOSFETs 650V MOSFET 25mOHMS SiC MOSFET
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8062034695
- Артикул
- C3M0025065D
- Бренд
- WOLFSPEED
- Tab
- Tab
- PPAP
- No
- EU RoHS
- Compliant with Exemption
- Material
- SiC
Цена по запросу
(от 1 419,29 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
SiC, MOSFET, 25 м, 650 В, TO-247-3, Промышленный, поколение 3
Технические параметры
| Tab | Tab |
| PPAP | No |
| EU RoHS | Compliant with Exemption |
| Material | SiC |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Pin Count | 3 |
| Automotive | No |
| Вес, г | 6 |
| PCB changed | 3 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Product Category | Power MOSFET |
| Supplier Package | TO-247 |
| Maximum IDSS (uA) | 50 |
| Process Technology | C3M |
| Standard Package Name | TO |
| Typical Fall Time (ns) | 12 |
| Typical Rise Time (ns) | 60 |
| Supplier Temperature Grade | Industrial |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 326000 |
| Typical Gate Charge @ Vgs (nC) | 108@15V |
| Maximum Gate Source Voltage (V) | 19 |
| Typical Turn-On Delay Time (ns) | 14 |
| Maximum Drain Source Voltage (V) | 650 |
| Typical Turn-Off Delay Time (ns) | 27 |
| Maximum Gate Threshold Voltage (V) | 3.6 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Continuous Drain Current (A) | 97 |
| Typical Input Capacitance @ Vds (pF) | 2980@600V |
| Maximum Drain Source Resistance (mOhm) | 34@15V |
| Maximum Gate Source Leakage Current (nA) | 250 |