BVSS84LT1G, Транзистор: P-MOSFET; -50В; -130мА; 225мВт; SOT23
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8025029802
- Артикул
- BVSS84LT1G
- Бренд
- ON Semiconductor***
- Brand:
- onsemi
- Series:
- BSS84L
- Pin Count
- 3
- Fall Time:
- 1.7 ns
Цена по запросу
(от 23,99 ₽)
Минимальный заказ: 5 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор полевой MOSFET P-канальный 50В 130мА, 0.225Вт
Технические параметры
| Brand: | onsemi |
| Series: | BSS84L |
| Pin Count | 3 |
| Fall Time: | 1.7 ns |
| Rise Time: | 9.7 ns |
| Вес, г | 0.02 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | P |
| Package Type | SOT-23 |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | onsemi |
| Mounting Type | Surface Mount |
| Package/Case: | SOT-23-3 |
| Product Type: | MOSFET |
| Configuration: | Single |
| Qualification: | AEC-Q101 |
| Mounting Style: | SMD/SMT |
| Transistor Type: | 1 P-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 2.2 nC |
| Automotive Standard | AEC-Q101 |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | P-Channel |
| Forward Diode Voltage | 2.2V |
| Pd - Power Dissipation: | 225 mW |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 225 mW |
| Typical Gate Charge @ Vgs | 2.2 nC @ 10 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Maximum Gate Source Voltage | ±20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 3.6 ns |
| Maximum Drain Source Voltage | 50 V |
| Typical Turn-Off Delay Time: | 12 ns |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 130 mA |
| Maximum Gate Threshold Voltage | 2V |
| Maximum Operating Temperature: | +150 C |
| Minimum Gate Threshold Voltage | 0.9V |
| Minimum Operating Temperature: | -55 C |
| Maximum Drain Source Resistance | 10 Ω |
| Maximum Continuous Drain Current | 130 mA |
| Rds On - Drain-Source Resistance: | 10 Ohms |
| Vds - Drain-Source Breakdown Voltage: | 50 V |
| Vgs th - Gate-Source Threshold Voltage: | 900 mV |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |