BUZ30AH3045AATMA1, Trans MOSFET N-CH 200V 21A 3-Pin(2+Tab) D2PAK T/R
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- Код товара
- 8001293370
- Артикул
- BUZ30AH3045AATMA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- Tab
- Tab
- PPAP
- No
- RoHS
- Details
- SVHC
- Yes
Цена по запросу
(от 221 ₽)
Минимальный заказ: 344 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH 200V 21A 3-контактный (2+Tab) D2PAK T/R
Технические параметры
| Tab | Tab |
| PPAP | No |
| RoHS | Details |
| SVHC | Yes |
| Brand | Infineon Technologies |
| Width | 4.4 mm |
| Height | 15.65 mm |
| Length | 10 mm |
| Mounting | Surface Mount |
| Fall Time | 90 ns |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Rise Time | 70 ns |
| Tradename | SIPMOS |
| Automotive | No |
| Lead Shape | Gull-wing |
| Technology | Si |
| Вес, г | 1 |
| PCB changed | 2 |
| Part Status | Obsolete |
| Unit Weight | 0.139332 oz |
| Channel Mode | Enhancement |
| Channel Type | N |
| Manufacturer | Infineon |
| Configuration | Single |
| Package Width | 9.45(Max)mm |
| Mounting Style | SMD/SMT |
| Package / Case | TO-263-3 |
| Package Length | 10.31(Max)mm |
| Part # Aliases | BUZ30A BUZ30AH3045AXT H3045A SP000736082 |
| Transistor Type | 1 N-Channel |
| Product Category | Power MOSFET |
| Qg - Gate Charge | - |
| Supplier Package | D2PAK |
| Number of Channels | 1 Channel |
| Process Technology | SIPMOS |
| Структура | N-Channel |
| Transistor Polarity | N-Channel |
| Factory Pack Quantity | 1000 |
| Standard Package Name | TO-263 |
| Pd - Power Dissipation | 125 W |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 90 |
| Typical Rise Time (ns) | 70 |
| Особенности | - |
| Vgs - Gate-Source Voltage | 20 V |
| Typical Turn-On Delay Time | 30 ns |
| Number of Elements per Chip | 1 |
| Typical Turn-Off Delay Time | 250 ns |
| Id - Continuous Drain Current | 21 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Forward Transconductance - Min | 6 S |
| Maximum Power Dissipation (mW) | 125000 |
| Maximum Gate-Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 30 |
| Maximum Drain-Source Voltage (V) | 200 |
| Rds On - Drain-Source Resistance | 100 mOhms |
| Typical Turn-Off Delay Time (ns) | 250 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 21 |
| Typical Input Capacitance @ Vds (pF) | 1400@25V |
| Vds - Drain-Source Breakdown Voltage | 200 V |
| Maximum Drain-Source Resistance (mOhm) | 130@10V |
| Vgs th - Gate-Source Threshold Voltage | 2.1 V |
| Крутизна характеристики, S | 15 |
| Пороговое напряжение на затворе | 2…4 В |
| Максимальное напряжение сток-исток Uси,В | 200 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 30 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |