BUK9M7R2-40EX, Транзистор: N-MOSFET
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8049142314
- Артикул
- BUK9M7R2-40EX
- Бренд
- Nexperia B.V.
- PPAP
- Unknown
- Brand:
- Nexperia
- EU RoHS
- Compliant with Exemption
- Mounting
- Surface Mount
Цена по запросу
(от 323 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH 40V 70A Автомобильный 8-контактный LFPAK EP T/R
Технические параметры
| PPAP | Unknown |
| Brand: | Nexperia |
| EU RoHS | Compliant with Exemption |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | Yes |
| Вес, г | 1 |
| PCB changed | 8 |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Single Triple Source |
| Manufacturer: | Nexperia |
| Product Type: | MOSFET |
| Configuration: | Single |
| Qualification: | AEC-Q101 |
| Mounting Style: | SMD/SMT |
| Package / Case: | LFPAK-33-8 |
| Part # Aliases: | 934070079115 |
| Product Category | Power MOSFET |
| Supplier Package | LFPAK EP |
| Maximum IDSS (uA) | 1 |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 19.7 nC |
| Process Technology | TMOS |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Typical Fall Time (ns) | 22 |
| Typical Rise Time (ns) | 28.5 |
| Pd - Power Dissipation: | 79 W |
| Supplier Temperature Grade | Automotive |
| Vgs - Gate-Source Voltage: | -10 V, +10 V |
| Number of Elements per Chip | 1 |
| Id - Continuous Drain Current: | 70 A |
| Maximum Operating Temperature: | +175 C |
| Maximum Power Dissipation (mW) | 79000 |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ Vgs (nC) | 19.7@5V |
| Maximum Gate Source Voltage (V) | 10 |
| Typical Turn-On Delay Time (ns) | 13.8 |
| Maximum Drain Source Voltage (V) | 40 |
| Typical Turn-Off Delay Time (ns) | 29.9 |
| Rds On - Drain-Source Resistance: | 5.8 mOhms |
| Maximum Gate Threshold Voltage (V) | 2.1 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 70 |
| Typical Input Capacitance @ Vds (pF) | 1930@25V |
| Vds - Drain-Source Breakdown Voltage: | 40 V |
| Maximum Drain Source Resistance (mOhm) | 5.8@10V |
| Vgs th - Gate-Source Threshold Voltage: | 1.4 V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Factory Pack Quantity: Factory Pack Quantity: | 1500 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 133@25V |