BUK9M24-40EX, Nexperia N-Kanal, SMD MOSFET 40 V / 30 A 44 W, 4-Pin LFPAK33
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8063909464
- Артикул
- BUK9M24-40EX
- Бренд
- Nexperia B.V.
- PPAP
- Unknown
- Brand
- Nexperia
- Mounting
- Surface Mount
- ECCN (US)
- EAR99
Цена по запросу
(от 94,63 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH 40V 30A Автомобильный AEC-Q101 с 8-контактным разъемом LFPAK EP T/R
Технические параметры
| PPAP | Unknown |
| Brand | Nexperia |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | Yes |
| Mount Type | Surface |
| Вес, г | 1 |
| PCB changed | 8 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | LFPAK |
| Product Type | MOSFET |
| Configuration | Single Quad Drain Triple Source |
| Product Category | Power MOSFET |
| Supplier Package | LFPAK EP |
| Maximum IDSS (uA) | 1 |
| Process Technology | TMOS |
| Automotive Standard | AEC-Q101 |
| Standards/Approvals | No |
| Typical Fall Time (ns) | 7.8 |
| Typical Rise Time (ns) | 9.5 |
| Supplier Temperature Grade | Automotive |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation Pd | 44W |
| Typical Gate Charge Qg @ Vgs | 3.3nC |
| Maximum Operating Temperature | 175°C |
| Minimum Operating Temperature | -55°C |
| Maximum Power Dissipation (mW) | 44000 |
| Typical Gate Charge @ Vgs (nC) | 7.7@5V |
| Maximum Gate Source Voltage (V) | 10 |
| Maximum Gate Source Voltage Vgs | 15 V |
| Typical Turn-On Delay Time (ns) | 6.3 |
| Maximum Drain Source Voltage (V) | 40 |
| Maximum Drain Source Voltage Vds | 40V |
| Typical Turn-Off Delay Time (ns) | 12.1 |
| Maximum Gate Threshold Voltage (V) | 2.1 |
| Maximum Continuous Drain Current Id | 30A |
| Maximum Drain Source Resistance Rds | 50mΩ |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 30 |
| Typical Input Capacitance @ Vds (pF) | 600@25V |
| Maximum Drain Source Resistance (mOhm) | 20@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |