OptiMOS™ 3 N-Channel MOSFET, 21 A, 150 V, 8-Pin TSDSON BSZ520N15NS3GATMA1
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- Код товара
- 8965987841
- Артикул
- BSZ520N15NS3GATMA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- RoHS
- Details
- Brand
- Infineon Technologies
- Width
- 3.4mm
- Brand:
- Infineon Technologies
Цена по запросу
(от 404 ₽)
Минимальный заказ: 2 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор МОП n-канальный, полевой, 150В, 21А, 57Вт, PG-TSDSON-8
Технические параметры
| RoHS | Details |
| Brand | Infineon Technologies |
| Width | 3.4mm |
| Brand: | Infineon Technologies |
| Height | 1.1 mm |
| Length | 3.3 mm |
| Series | OptiMOS 3 |
| Series: | OptiMOS 3 |
| Fall Time | 3 ns |
| Packaging | Cut Tape |
| Pin Count | 8 |
| Rise Time | 5 ns |
| Tradename | OptiMOS |
| Fall Time: | 3 ns |
| Rise Time: | 5 ns |
| Technology | Si |
| Tradename: | OptiMOS |
| Вес, г | 1 |
| Technology: | Si |
| Unit Weight | 0.007055 oz |
| Channel Mode | Enhancement |
| Channel Type | N |
| Manufacturer | Infineon |
| Package Type | TSDSON |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Single |
| Manufacturer: | Infineon |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style | SMD/SMT |
| Package / Case | TSDSON-8 |
| Part # Aliases | BSZ520N15NS3 BSZ52N15NS3GXT G SP000607022 |
| Mounting Style: | SMD/SMT |
| Package / Case: | TSDSON-8 |
| Part # Aliases: | BSZ520N15NS3 G SP000607022 |
| Transistor Type | 1 N-Channel |
| Product Category | MOSFET |
| Qg - Gate Charge | 12 nC |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 8.7 nC |
| Number of Channels | 1 Channel |
| Структура | N-Channel |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity | N-Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity | 5000 |
| Pd - Power Dissipation | 57 W |
| Особенности | - |
| Pd - Power Dissipation: | 57 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 57 W |
| Typical Gate Charge @ Vgs | 8.7 nC @ 10 V |
| Vgs - Gate-Source Voltage | 20 V |
| Typical Turn-On Delay Time | 7 ns |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-Off Delay Time | 10 ns |
| Typical Turn-On Delay Time: | 7 ns |
| Maximum Drain Source Voltage | 150 V |
| Typical Turn-Off Delay Time: | 10 ns |
| Id - Continuous Drain Current | 21 A |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Forward Transconductance - Min | 11 S |
| Id - Continuous Drain Current: | 21 A |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Operating Temperature: | +150 C |
| Minimum Gate Threshold Voltage | 2V |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 11 S |
| Maximum Drain Source Resistance | 52 mΩ |
| Maximum Continuous Drain Current | 21 A |
| Rds On - Drain-Source Resistance | 42 mOhms |
| Rds On - Drain-Source Resistance: | 52 mOhms |
| Vds - Drain-Source Breakdown Voltage | 150 V |
| Vds - Drain-Source Breakdown Voltage: | 150 V |
| Vgs th - Gate-Source Threshold Voltage | 2 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Factory Pack Quantity: Factory Pack Quantity: | 5000 |
| Максимальное напряжение сток-исток Uси,В | 150 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 21 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 57 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |