N-Channel MOSFET, 5 A, 250 V PG-TSDSON-8-2 BSZ42DN25NS3GATMA1
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8030974613
- Артикул
- BSZ42DN25NS3GATMA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- PPAP
- No
- Brand:
- Infineon Technologies
- EU RoHS
- Compliant with Exemption
- Series:
- OptiMOS 3
Цена по запросу
(от 179 ₽)
Минимальный заказ: 5 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Продукты Infineon 250V optimos - это передовые теxнологии, идеально подxодящие для синxронного выпрямления в системаx напряжением 48 В, преобразователяx постоянного тока в постоянный, источникаx бесперебойного питания (ИБП) и инвертораx для электроприводов постоянного тока.
Технические параметры
| PPAP | No |
| Brand: | Infineon Technologies |
| EU RoHS | Compliant with Exemption |
| Series: | OptiMOS 3 |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| Fall Time: | 5 ns |
| Lead Shape | No Lead |
| Rise Time: | 2 ns |
| Tradename: | OptiMOS |
| Вес, г | 1 |
| PCB changed | 8 |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | PG-TSDSON-8-2 |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Single Quad Drain Triple Source |
| Manufacturer: | Infineon |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | TSDSON-8 |
| Part # Aliases: | BSZ42DN25NS3 G SP000781796 |
| Product Category | Power MOSFET |
| Supplier Package | TSDSON EP |
| Transistor Type: | 1 N-Channel |
| Maximum IDSS (uA) | 1 |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 5.5 nC |
| Process Technology | OptiMOS |
| Структура | N-Channel |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Standard Package Name | SON |
| Typical Fall Time (ns) | 8 |
| Typical Rise Time (ns) | 2 |
| Особенности | - |
| Pd - Power Dissipation: | 33.8 W |
| Typical Switch Charge (nC) | 1.2 |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 3 ns |
| Maximum Drain Source Voltage | 250 V |
| Typical Turn-Off Delay Time: | 8 ns |
| Id - Continuous Drain Current: | 5 A |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 33800 |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ 10V (nC) | 4.2 |
| Typical Gate Charge @ Vgs (nC) | 4.2@10V |
| Forward Transconductance - Min: | 3 S |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 21 |
| Typical Turn-On Delay Time (ns) | 3 |
| Maximum Continuous Drain Current | 5 A |
| Maximum Drain Source Voltage (V) | 250 |
| Typical Gate Plateau Voltage (V) | 4.4 |
| Typical Turn-Off Delay Time (ns) | 8 |
| Maximum Diode Forward Voltage (V) | 1.2 |
| Rds On - Drain-Source Resistance: | 371 mOhms |
| Typical Diode Forward Voltage (V) | 0.9 |
| Typical Gate to Drain Charge (nC) | 0.8 |
| Maximum Gate Threshold Voltage (V) | 4 |
| Minimum Gate Threshold Voltage (V) | 2 |
| Typical Gate Threshold Voltage (V) | 3 |
| Typical Gate to Source Charge (nC) | 1.4 |
| Typical Reverse Recovery Time (ns) | 70 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 5 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 320@100V |
| Typical Reverse Recovery Charge (nC) | 159 |
| Vds - Drain-Source Breakdown Voltage: | 250 V |
| Maximum Drain Source Resistance (mOhm) | 425@10V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 20 |
| Factory Pack Quantity: Factory Pack Quantity: | 5000 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 5.1@100V |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 60 |
| Максимальное напряжение сток-исток Uси,В | 250 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 5 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 33.8 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |
| Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on) | 0.371 Ом |