BSZ180P03NS3 G, TSDSON-8(3.3x3.3) MOSFETs ROHS
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8044550344
- Артикул
- BSZ180P03NS3 G
- Бренд
- INFINEON TECHNOLOGIES AG.
- Brand:
- Infineon Technologies
- Fall Time:
- 3 ns
- Rise Time:
- 11 ns
- Вес, г
- 1
Цена по запросу
(от 69,01 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Infineon Technologies |
| Fall Time: | 3 ns |
| Rise Time: | 11 ns |
| Вес, г | 1 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Infineon |
| Package/Case: | TSDSON-8 |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Part # Aliases: | BSZ18P3NS3GXT SP000709744 BSZ180P03NS3GATMA1 |
| Transistor Type: | 1 P-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 30 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | P-Channel |
| Factory Pack Quantity: | 5000 |
| Pd - Power Dissipation: | 40 W |
| Vgs - Gate-Source Voltage: | -25 V, +25 V |
| Typical Turn-On Delay Time: | 11 ns |
| Typical Turn-Off Delay Time: | 20 ns |
| Id - Continuous Drain Current: | 39.6 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 18 S |
| Rds On - Drain-Source Resistance: | 13.5 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs th - Gate-Source Threshold Voltage: | 3.1 V |