OptiMOS™ N-Channel MOSFET Transistor & Diode, 40 A, 60 V, 8-Pin PQFN 3 x 3 BSZ100N06NSATMA1
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8014562167
- Артикул
- BSZ100N06NSATMA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- Brand:
- Infineon Technologies
- Series
- OptiMOS™
- FET Type
- N-Channel
- Pin Count
- 8
Цена по запросу
(от 190,79 ₽)
Минимальный заказ: 20 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Infineon OptiMOS 5 60V оптимизирован для синxронного выпрямления в импульсныx источникаx питания (SMPS), такиx как серверы, настольные компьютеры и зарядные устройства для планшетов.
Технические параметры
| Brand: | Infineon Technologies |
| Series | OptiMOS™ |
| FET Type | N-Channel |
| Pin Count | 8 |
| Vgs (Max) | ±20V |
| Fall Time: | 2 ns |
| Rise Time: | 2 ns |
| Technology | MOSFET(Metal Oxide) |
| Вес, г | 1 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | PQFN 3x3 |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Infineon |
| Mounting Type | Surface Mount |
| Package/Case: | TSDSON-8 |
| Product Type: | MOSFET |
| Configuration: | Single |
| Package / Case | 8-PowerTDFN |
| Mounting Style: | SMD/SMT |
| Part # Aliases: | BSZ100N06NS SP001067006 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 15 nC |
| Vgs(th) (Max) @ Id | 3.3V @ 14µA |
| Структура | N-Channel |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Operating Temperature | -55°C ~ 150°C(TJ) |
| Factory Pack Quantity: | 5000 |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 20A, 10V |
| Особенности | - |
| Pd - Power Dissipation: | 36 W |
| Power Dissipation (Max) | 2.1W(Ta), 36W(Tc) |
| Supplier Device Package | PG-TSDSON-8-FL |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 6 ns |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Maximum Drain Source Voltage | 60 V |
| Typical Turn-Off Delay Time: | 10 ns |
| Drain to Source Voltage (Vdss) | 60 V |
| Id - Continuous Drain Current: | 40 A |
| Maximum Gate Threshold Voltage | 3.3V |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 16 S |
| Maximum Drain Source Resistance | 0.001 O |
| Maximum Continuous Drain Current | 40 A |
| Rds On - Drain-Source Resistance: | 8.5 mOhms |
| Input Capacitance (Ciss) (Max) @ Vds | 1075 pF @ 30 V |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 40A(Tc) |
| Vgs th - Gate-Source Threshold Voltage: | 2.1 V |
| Максимальное напряжение сток-исток Uси,В | 60 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 40 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |