BSZ086P03NS3GATMA1, Trans MOSFET P-CH 30V 13.5A 8-Pin TSDSON EP T/R
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- Код товара
- 8001292853
- Артикул
- BSZ086P03NS3GATMA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- PPAP
- No
- Width
- 3.4mm
- Brand:
- Infineon Technologies
- Series
- OptiMOS P
Цена по запросу
(от 147 ₽)
Минимальный заказ: 150 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET P-CH 30V 13,5A с 8-контактным разъемом TSDSON EP T/R
Технические параметры
| PPAP | No |
| Width | 3.4mm |
| Brand: | Infineon Technologies |
| Series | OptiMOS P |
| EU RoHS | Compliant with Exemption |
| Series: | OptiMOS P3 |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| Fall Time: | 8 ns |
| Lead Shape | No Lead |
| Rise Time: | 46 ns |
| Tradename: | OptiMOS |
| Вес, г | 4 |
| PCB changed | 8 |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | P |
| Package Type | TSDSON |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Single Quad Drain Triple Source |
| Manufacturer: | Infineon |
| Mounting Type | Surface Mount |
| Package/Case: | TSDSON-8 |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | TSDSON-8 |
| Part # Aliases: | SP000473024 BSZ86P3NS3GXT BSZ086P03NS3GATMA1 |
| Product Category | Power MOSFET |
| Supplier Package | TSDSON EP |
| Transistor Type: | 1 P-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 57.5 nC |
| Process Technology | OptiMOS |
| Структура | MOSFET |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity: | P-Channel |
| Standard Package Name | SON |
| Factory Pack Quantity: | 5000 |
| Power Dissipation (Pd) | 2.1W |
| Typical Fall Time (ns) | 8 |
| Typical Rise Time (ns) | 46 |
| Особенности | - |
| Pd - Power Dissipation: | 69 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 69 W |
| Typical Gate Charge @ Vgs | 43.2 nC @ 10 V |
| Vgs - Gate-Source Voltage: | -25 V, +25 V |
| Maximum Gate Source Voltage | -25 V, +25 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 16 ns |
| Maximum Drain Source Voltage | 30 V |
| Typical Turn-Off Delay Time: | 35 ns |
| Continuous Drain Current (Id) | 13.5A |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 40 A |
| Maximum Gate Threshold Voltage | 1.9V |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 69000 |
| Minimum Gate Threshold Voltage | 3.1V |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ 10V (nC) | 43.2 |
| Typical Gate Charge @ Vgs (nC) | 43.2@10V |
| Forward Transconductance - Min: | 30 S |
| Maximum Drain Source Resistance | 13.4 mΩ |
| Maximum Gate Source Voltage (V) | ±25 |
| Typical Turn-On Delay Time (ns) | 16 |
| Maximum Continuous Drain Current | 40 A |
| Maximum Drain Source Voltage (V) | 30 |
| Typical Turn-Off Delay Time (ns) | 35 |
| Rds On - Drain-Source Resistance: | 6.5 mOhms |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 13.5 |
| Typical Input Capacitance @ Vds (pF) | 3190@15V |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Maximum Drain Source Resistance (mOhm) | 8.6@10V |
| Vgs th - Gate-Source Threshold Voltage: | 3.1 V |
| Factory Pack Quantity: Factory Pack Quantity: | 5000 |
| Пороговое напряжение на затворе | -20 V, +20 V |
| Максимальное напряжение сток-исток Uси,В | 30 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 13.5 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |