OptiMOS™ 3 N-Channel MOSFET, 20 A, 60 V, 8-Pin TSDSON BSZ067N06LS3GATMA1
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8261395388
- Артикул
- BSZ067N06LS3GATMA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- PPAP
- No
- Width
- 3.4mm
- Brand:
- Infineon Technologies
- Series
- OptiMOS 3
Цена по запросу
(от 450 ₽)
Минимальный заказ: 5 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Продукция OptiMOS™ выпускается в высокопроизводительныx комплектацияx для решения самыx сложныx задач, обеспечивая полную гибкость в условияx ограниченного пространства.
Технические параметры
| PPAP | No |
| Width | 3.4mm |
| Brand: | Infineon Technologies |
| Series | OptiMOS 3 |
| EU RoHS | Compliant with Exemption |
| Series: | OptiMOS 3 |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| Fall Time: | 7 ns |
| Lead Shape | No Lead |
| Rise Time: | 26 ns |
| Tradename: | OptiMOS |
| Вес, г | 5 |
| PCB changed | 8 |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | TSDSON |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Single Quad Drain Triple Source |
| Manufacturer: | Infineon |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | TSDSON-8 |
| Part # Aliases: | BSZ067N06LS3 G SP000451080 |
| Product Category | Power MOSFET |
| Supplier Package | TSDSON EP |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 51 nC |
| Process Technology | OptiMOS |
| Структура | N-Channel |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity: | N-Channel |
| Standard Package Name | SON |
| Typical Fall Time (ns) | 7 |
| Typical Rise Time (ns) | 26 |
| Особенности | - |
| Pd - Power Dissipation: | 69 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 69 W |
| Typical Gate Charge @ Vgs | 23 nC @ 4.5 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 15 ns |
| Maximum Drain Source Voltage | 60 V |
| Typical Turn-Off Delay Time: | 37 ns |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 20 A |
| Maximum Gate Threshold Voltage | 2.2V |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 2100 |
| Minimum Gate Threshold Voltage | 1.2V |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ 10V (nC) | 51 |
| Typical Gate Charge @ Vgs (nC) | 23 4.5V|51 10V |
| Forward Transconductance - Min: | 25 S |
| Maximum Drain Source Resistance | 12.1 mΩ |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 15 |
| Maximum Continuous Drain Current | 20 A |
| Maximum Drain Source Voltage (V) | 60 |
| Typical Turn-Off Delay Time (ns) | 37 |
| Rds On - Drain-Source Resistance: | 5.3 mOhms |
| Maximum Gate Threshold Voltage (V) | 2.2 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 14 |
| Typical Input Capacitance @ Vds (pF) | 3800 30V |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Maximum Drain Source Resistance (mOhm) | 6.7 10V |
| Vgs th - Gate-Source Threshold Voltage: | 1.7 V |
| Factory Pack Quantity: Factory Pack Quantity: | 5000 |
| Максимальное напряжение сток-исток Uси,В | 60 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 20 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 69 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |