N-Channel MOSFET, 61 A PG-TSDSON-8 FL BSZ0506NSATMA1
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8030976996
- Артикул
- BSZ0506NSATMA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- RoHS
- Details
- Brand
- Infineon Technologies
- Width
- 3.3 mm
- Brand:
- Infineon Technologies
Цена по запросу
(от 110 ₽)
Минимальный заказ: 5000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Мощный МОП-транзистор Infineon N channel OptiMOS работает в режиме улучшения и оптимизирован для высокопроизводительныx понижающиx преобразователей.
Технические параметры
| RoHS | Details |
| Brand | Infineon Technologies |
| Width | 3.3 mm |
| Brand: | Infineon Technologies |
| Height | 1.1 mm |
| Length | 3.3 mm |
| Series | OptiMOS 5 |
| Series: | OptiMOS 5 |
| Fall Time | 2 ns |
| Packaging | MouseReel |
| Rise Time | 2.4 ns |
| Tradename | OptiMOS |
| Fall Time: | 2 ns |
| Rise Time: | 2.4 ns |
| Technology | Si |
| Tradename: | OptiMOS |
| Вес, г | 1 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Manufacturer | Infineon |
| Package Type | PG-TSDSON-8 FL |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Single |
| Manufacturer: | Infineon |
| Product Type: | MOSFET |
| Qualification | AEC-Q100 |
| Configuration: | Single |
| Mounting Style | SMD/SMT |
| Package / Case | TSDSON-8 |
| Part # Aliases | BSZ0506NS SP001281636 |
| Mounting Style: | SMD/SMT |
| Package / Case: | TSDSON-8 |
| Part # Aliases: | BSZ0506NS SP001281636 |
| Product Category | MOSFET |
| Qg - Gate Charge | 11 nC |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 11 nC |
| Структура | N-Channel |
| Number of Channels: | 1 Channel |
| Transistor Polarity | N-Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity | 5000 |
| Pd - Power Dissipation | 27 W |
| Power Dissipation (Pd) | 2.1W;27W |
| Особенности | - |
| Pd - Power Dissipation: | 27 W |
| Vgs - Gate-Source Voltage | 20 V |
| Total Gate Charge (Qg@Vgs) | 15nC@10V |
| Typical Turn-On Delay Time | 2.3 ns |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-Off Delay Time | 13 ns |
| Typical Turn-On Delay Time: | 2.3 ns |
| Input Capacitance (Ciss@Vds) | 950pF@15V |
| Typical Turn-Off Delay Time: | 13 ns |
| Continuous Drain Current (Id) | 15A;40A |
| Id - Continuous Drain Current | 40 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Forward Transconductance - Min | 98 S |
| Id - Continuous Drain Current: | 40 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 49 S |
| Maximum Continuous Drain Current | 61 A |
| Rds On - Drain-Source Resistance | 4.4 mOhms |
| Rds On - Drain-Source Resistance: | 4.4 mOhms |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs th - Gate-Source Threshold Voltage | 1.6 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Factory Pack Quantity: Factory Pack Quantity: | 5000 |
| Пороговое напряжение на затворе | 2V@250uA |
| Максимальный ток сток-исток при 25 С Iси макс..А | 61 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |