Diodes Inc BST52TA NPN Darlington Transistor, 500 mA 80 V HFE:1000, 3-Pin SOT-89

Name: Diodes Inc BST52TA NPN Darlington Transistor, 500 mA 80 V HFE:1000, 3-Pin SOT-89
Brand: DIODES INC.
SKU: 8010470330

Изображения служат только для ознакомления, см. техническую документацию

Цена по запросу

(от 69 ₽)

Минимальный заказ: 25 шт.

Стоимость и сроки поставки подтвердит менеджер после заявки.

Технические параметры

I(C)	0.5 A
Width	2.6mm
Brand:	Diodes Incorporated
P(tot)	1 W
V(CBO)	90 V
V(CEO)	80 V
Package	SOT89
Series:	BST52
Packaging	REEL
Pin Count	3
Automotive	NO
Вес, г	1
RoHS Status	RoHS-conform
Current gain	1000
Package Type	SOT-89
Polarisation	NPN
Subcategory:	Transistors
Корпус	SOT-89/TO-243
Manufacturer:	Diodes Incorporated
Mounting Type	Surface Mount
Product Type:	Darlington Transistors
Configuration:	Single
Mounting Style:	SMD/SMT
Package / Case:	SOT-89
Transistor Type	NPN
Product Category:	Darlington Transistors
Структура	npn
Transistor Polarity:	NPN
Minimum DC Current Gain	1000
Pd - Power Dissipation:	1 W
DC Current Gain hFE Max:	1000
Transistor Configuration	Single
Maximum Power Dissipation	1 W
Emitter- Base Voltage VEBO:	10 V
Number of Elements per Chip	1
Maximum Emitter Base Voltage	10 V
Collector- Base Voltage VCBO:	90 V
Continuous Collector Current:	0.5 A
Maximum DC Collector Current:	0.5 A
Maximum Operating Temperature	+150 °C
Minimum Operating Temperature	-65 °C
Maximum Collector Base Voltage	90 V
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-65 C
DC Collector/Base Gain hfe Min:	1000 at 150 mA at 10 V, 2000 at 500 mA at 10 V
Maximum Collector Emitter Voltage	80 V
Collector- Emitter Voltage VCEO Max:	80 V
Maximum Continuous Collector Current	500 mA
Maximum Base Emitter Saturation Voltage	1.9 V
Maximum Collector Emitter Saturation Voltage	1.3 V
Factory Pack Quantity: Factory Pack Quantity:	1000