SIPMOS® N-Channel MOSFET, 260 mA, 240 V, 3-Pin SOT-89 BSS87H6327FTSA1
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8748802341
- Артикул
- BSS87H6327FTSA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- Case
- SOT89-4
- RoHS
- Details
- Brand
- Infineon Technologies
- V(DS)
- 240 V
Цена по запросу
(от 74,69 ₽)
Минимальный заказ: 10 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Infineon предлагает большой и всесторонний ассортимент устройств на МОП-транзистораx, который включает семейства CoolMOS, OptiMOS и StrongIRFET.
Технические параметры
| Case | SOT89-4 |
| RoHS | Details |
| Brand | Infineon Technologies |
| V(DS) | 240 V |
| Width | 2.5mm |
| Height | 1.5 mm |
| Length | 4.5 mm |
| P(tot) | 1 W |
| Series | SIPMOS® |
| Package | SOT-89 |
| Mounting | SMD |
| Fall Time | 27.3 ns |
| Packaging | Reel |
| Pin Count | 3 |
| Rise Time | 3.5 ns |
| Automotive | AEC-Q(101) |
| Technology | Si |
| Вес, г | 2 |
| RoHS Status | RoHS-conform |
| Channel Mode | Enhancement |
| Channel Type | N |
| Manufacturer | Infineon |
| Package Type | SOT-89 |
| Polarisation | unipolar |
| Корпус | sot-89 |
| Configuration | 1 N-Channel |
| Drain current | 0.26A |
| Mounting Type | Surface Mount |
| RDS(on)at 10V | 6000 mOhm |
| Fast bodydiode | NO |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-89-3 |
| Part # Aliases | BSS87 H6327 SP001047646 |
| I(D)at Tc=25°C | 0.29 A |
| Kind of channel | enhancement |
| Transistor Type | 1 N-Channel |
| Product Category | MOSFET |
| Qg - Gate Charge | 5.5 nC |
| Power dissipation | 1W |
| Number of Channels | 1 Channel |
| Type of transistor | N-MOSFET |
| Структура | N-Channel |
| Gate-source voltage | ±20V |
| On-state resistance | 6Ω |
| Transistor Material | Si |
| Transistor Polarity | N-Channel |
| Drain-source voltage | 240V |
| Factory Pack Quantity | 1000 |
| Pd - Power Dissipation | 1 W |
| Особенности | - |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 1 W |
| Typical Gate Charge @ Vgs | 3.7 nC @ 10 V |
| Vgs - Gate-Source Voltage | 20 V |
| Typical Turn-On Delay Time | 3.7 ns |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-Off Delay Time | 17.6 ns |
| Maximum Drain Source Voltage | 240 V |
| Id - Continuous Drain Current | 260 mA |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Forward Transconductance - Min | 160 mS |
| Maximum Gate Threshold Voltage | 1.8V |
| Minimum Gate Threshold Voltage | 0.8V |
| Maximum Drain Source Resistance | 7.5 Ω |
| Maximum Continuous Drain Current | 260 mA |
| Rds On - Drain-Source Resistance | 3.9 Ohms |
| Vds - Drain-Source Breakdown Voltage | 240 V |
| Vgs th - Gate-Source Threshold Voltage | 800 mV |
| Максимальное напряжение сток-исток Uси,В | 240 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 0.26 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 1 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |