BSS84W-7-F, Trans MOSFET P-CH 50V 0.13A 3-Pin SOT-323 T/R
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- Код товара
- 8001122577
- Артикул
- BSS84W-7-F
- Бренд
- DIODES INC.
- HTS
- 8541.29.00.95
- Type:
- Enhancement Mode Field Effect Transistor
- Width
- 1.35mm
- Brand:
- Diodes Incorporated
Цена по запросу
(от 10 ₽)
Минимальный заказ: 3400 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор P-MOSFET, полевой, -50В, -0,13А, 0,2Вт, SOT323 Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| HTS | 8541.29.00.95 |
| Type: | Enhancement Mode Field Effect Transistor |
| Width | 1.35mm |
| Brand: | Diodes Incorporated |
| Вид | MOSFET |
| Тип | полевой |
| EU RoHS | Compliant |
| Series: | BSS84 |
| Military | No |
| Mounting | Surface Mount |
| Product: | MOSFET Small Signal |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | Yes |
| Lead Shape | Gull-wing |
| Вес, г | 0.05 |
| PCB changed | 3 |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | P |
| Package Type | SOT-323 |
| Subcategory: | MOSFETs |
| Корпус | sot-323 |
| Channel Mode: | Enhancement |
| Configuration | Single |
| Manufacturer: | Diodes Incorporated |
| Mounting Type | Surface Mount |
| Package Width | 1.3 |
| Product Type: | MOSFET |
| Configuration: | Single |
| Package Height | 0.95 |
| Package Length | 2.15 |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-323-3 |
| Product Category | Small Signal |
| Supplier Package | SOT-323 |
| Transistor Type: | 1 P-Channel |
| Maximum IDSS (uA) | 1 |
| Product Category: | MOSFET |
| Структура | MOSFET |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity | P Channel |
| AEC Qualified Number | AEC-Q101 |
| Transistor Polarity: | P-Channel |
| Standard Package Name | SOT-323 |
| Особенности | - |
| Pd - Power Dissipation: | 200 mW |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 200 mW |
| Vgs - Gate-Source Voltage | 2V @ 1mA |
| Supplier Temperature Grade | Automotive |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 10 ns |
| Maximum Drain Source Voltage | 50 V |
| Typical Turn-Off Delay Time: | 18 ns |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 130 mA |
| Maximum Gate Threshold Voltage | 2V |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 200 |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 0.05 S |
| Maximum Drain Source Resistance | 10 Ω |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 10 |
| Maximum Continuous Drain Current | 130 mA |
| Maximum Drain Source Voltage (V) | 50 |
| Rds On - Drain-Source Resistance | 10О© @ 100mA,5V |
| Typical Turn-Off Delay Time (ns) | 18 |
| Rds On - Drain-Source Resistance: | 10 Ohms |
| Maximum Gate Threshold Voltage (V) | 2 |
| Power Dissipation-Max (Ta=25В°C) | 200mW |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 0.13 |
| Typical Input Capacitance @ Vds (pF) | 45(Max)@25V |
| Vds - Drain-Source Breakdown Voltage | 50V |
| Vds - Drain-Source Breakdown Voltage: | 50 V |
| Maximum Drain Source Resistance (mOhm) | 10000@5V |
| Continuous Drain Current (Id) @ 25В°C | 130mA |
| Vgs th - Gate-Source Threshold Voltage: | 800 mV |
| Maximum Gate Source Leakage Current (nA) | 10 |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Пороговое напряжение на затворе | 1…2.5 В |
| Максимальное напряжение сток-исток Uси,В | 50 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 0.13 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 84 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |