BSS215PH6327XTSA1, Транзистор: P-MOSFET, полевой, -20В, -1,5А, 0,5Вт, PG-SOT23
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- Код товара
- 8062073160
- Артикул
- BSS215PH6327XTSA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- Case
- PG-SOT23
- RoHS
- Details
- Brand
- Infineon Technologies
- V(DS)
- 20 V
Цена по запросу
(от 17 ₽)
Минимальный заказ: 3000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
P-канальные МОП-транзисторы Infineon OptiMOS™ разработаны таким образом, чтобы обеспечить расширенные возможности и высокое качество исполнения.
Технические параметры
| Case | PG-SOT23 |
| RoHS | Details |
| Brand | Infineon Technologies |
| V(DS) | 20 V |
| Width | 1.3mm |
| Height | 1.1 mm |
| Length | 2.9 mm |
| P(tot) | 0.5 W |
| Series | OptiMOS P |
| Package | SOT-23 |
| Mounting | SMD |
| Fall Time | 14 ns |
| Packaging | Reel |
| Pin Count | 3 |
| Rise Time | 9.7 ns |
| Automotive | AEC-Q(101) |
| Technology | OptiMOS™ P2 |
| Вес, г | 0.03 |
| RoHS Status | RoHS-conform |
| Channel Mode | Enhancement |
| Channel Type | P |
| Manufacturer | INFINEON TECHNOLOGIES |
| Package Type | SOT-23 |
| Polarisation | unipolar |
| Configuration | 1 P-Channel |
| Drain current | -1.5A |
| Mounting Type | Surface Mount |
| RDS(on)at 10V | 166 mOhm |
| Fast bodydiode | NO |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-23-3 |
| Part # Aliases | BSS215P BSS215PH6327XT H6327 SP000928938 |
| I(D)at Tc=25°C | 1.5 A |
| Kind of channel | enhanced |
| Transistor Type | 1 P-Channel |
| Product Category | MOSFET |
| Qg - Gate Charge | -3.6 nC |
| Power dissipation | 0.5W |
| Number of Channels | 1 Channel |
| Type of transistor | P-MOSFET |
| Gate-source voltage | ±12V |
| On-state resistance | 0.15Ω |
| Transistor Material | Si |
| Transistor Polarity | P-Channel |
| Drain-source voltage | -20V |
| Factory Pack Quantity | 3000 |
| Pd - Power Dissipation | 500 mW |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 500 mW |
| Typical Gate Charge @ Vgs | 3.6 nC @ 4.5 V |
| Vgs - Gate-Source Voltage | +/-12 V |
| Typical Turn-On Delay Time | 6.7 ns |
| Maximum Gate Source Voltage | -12 V, +12 V |
| Number of Elements per Chip | 1 |
| Typical Turn-Off Delay Time | 14.5 ns |
| Maximum Drain Source Voltage | 20 V |
| Id - Continuous Drain Current | -1.5 A |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Forward Transconductance - Min | 4.5 S |
| Maximum Gate Threshold Voltage | 0.6V |
| Minimum Gate Threshold Voltage | 1.2V |
| Maximum Drain Source Resistance | 280 mΩ |
| Maximum Continuous Drain Current | 1.18 A |
| Rds On - Drain-Source Resistance | 105 mOhms |
| Vds - Drain-Source Breakdown Voltage | -20 V |
| Vgs th - Gate-Source Threshold Voltage | -1.2 V |