BSS209PWH6327, Транзистор MOSFET
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8042954024
- Артикул
- BSS209PWH6327
- Бренд
- INFINEON TECHNOLOGIES AG.
- Brand:
- Infineon Technologies
- Series:
- BSS209
- Fall Time:
- 4.6 ns
- Rise Time:
- 7 ns
Цена по запросу
(от 27 ₽)
Минимальный заказ: 5 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор полевой MOSFET P-канальный 20В 0.63А 0.3Вт
Технические параметры
| Brand: | Infineon Technologies |
| Series: | BSS209 |
| Fall Time: | 4.6 ns |
| Rise Time: | 7 ns |
| Вес, г | 0.15 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Infineon |
| Product Type: | MOSFET |
| Configuration: | Single |
| Qualification: | AEC-Q101 |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-323-3 |
| Part # Aliases: | BSS29PWH6327XT SP000750498 BSS209PWH6327XTSA1 |
| Transistor Type: | 1 P-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 1 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | P-Channel |
| Pd - Power Dissipation: | 300 mW |
| Vgs - Gate-Source Voltage: | -12 V, +12 V |
| Typical Turn-On Delay Time: | 2.6 ns |
| Typical Turn-Off Delay Time: | 6 ns |
| Id - Continuous Drain Current: | 630 mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 0.87 S |
| Rds On - Drain-Source Resistance: | 550 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.2 V |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |