BSS138LT3G, MOSFETs 50V 200mA N-Channel
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8006239643
- Артикул
- BSS138LT3G
- Бренд
- ON Semiconductor***
- PPAP
- No
- Width
- 1.3mm
- Series
- BSS138L
- Mounting
- Surface Mount
Цена по запросу
(от 21,08 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH 50 В 0,2 А, 3-контактный SOT-23 T/R
Технические параметры
| PPAP | No |
| Width | 1.3mm |
| Series | BSS138L |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Вес, г | 0.01 |
| PCB changed | 3 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | SOT-23 |
| Configuration | Single |
| Mounting Type | Surface Mount |
| Product Category | Power MOSFET |
| Supplier Package | SOT-23 |
| Maximum IDSS (uA) | 0.5 |
| Структура | N-Channel |
| Transistor Material | Si |
| Standard Package Name | SOT |
| Особенности | - |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 225 mW |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 50 V |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Maximum Gate Threshold Voltage | 1.5V |
| Maximum Power Dissipation (mW) | 225 |
| Minimum Gate Threshold Voltage | 0.5V |
| Maximum Drain Source Resistance | 3.5 Ω |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 12 |
| Typical Turn-On Delay Time (ns) | 20(Max) |
| Maximum Continuous Drain Current | 200 mA |
| Maximum Drain Source Voltage (V) | 50 |
| Typical Gate Plateau Voltage (V) | 1.9 |
| Typical Turn-Off Delay Time (ns) | 20(Max) |
| Maximum Gate Threshold Voltage (V) | 1.5 |
| Minimum Gate Threshold Voltage (V) | 0.85 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 0.2 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 40@25V |
| Maximum Drain Source Resistance (mOhm) | 3500@5V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 0.8 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 3.5 |
| Пороговое напряжение на затворе | 0.8…1.5 В |
| Максимальное напряжение сток-исток Uси,В | 50 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 0.2 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |