BSS138-G, 50V 220mA 360mW 6Ohm@4.5V,0.22A 1.5V@1mA SOT-23-3 MOSFETs ROHS
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8059285537
- Артикул
- BSS138-G
- Бренд
- ON Semiconductor***
- Brand:
- onsemi
- Fall Time:
- 7 ns
- Rise Time:
- 9 ns
- Вес, г
- 0.04
Цена по запросу
(от 37,76 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | onsemi |
| Fall Time: | 7 ns |
| Rise Time: | 9 ns |
| Вес, г | 0.04 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | onsemi |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-23-3 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 1.7 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity: | 3000 |
| Pd - Power Dissipation: | 350 mW |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 2.5 ns |
| Typical Turn-Off Delay Time: | 20 ns |
| Id - Continuous Drain Current: | 220 mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 0.12 S |
| Rds On - Drain-Source Resistance: | 3.5 Ohms |
| Vds - Drain-Source Breakdown Voltage: | 50 V |
| Vgs th - Gate-Source Threshold Voltage: | 800 mV |