BSS138, МОП-Транзистор 50 В 220 мА 3,5 Ом при 10 В, 220 мА 360мВт N-канальные МОП-Транзистор SOT-23(TO-236)
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8025033401
- Артикул
- BSS138
- Бренд
- ON Semiconductor***
- PPAP
- No
- Type
- Power MOSFET
- Width
- 1.3mm
- Mounting
- Surface Mount
Цена по запросу
(от 6,23 ₽)
Минимальный заказ: 10 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Полевые транзисторы (FET) в режиме усиления производятся с использованием запатентованной компанией Fairchild теxнологии DMOS с высокой плотностью ячеек.
Технические параметры
| PPAP | No |
| Type | Power MOSFET |
| Width | 1.3mm |
| Mounting | Surface Mount |
| Polarity | N |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Вес, г | 0.05 |
| PCB changed | 3 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | SOT-23 |
| Rad Hardened | No |
| Корпус | SOT-23 |
| Configuration | Single |
| Mounting Type | Surface Mount |
| Product Category | Power MOSFET |
| Supplier Package | SOT-23 |
| Maximum IDSS (uA) | 0.5 |
| Power Dissipation | 0.225(W) |
| Number of Elements | 1 |
| Process Technology | DMOS |
| Структура | N-Channel |
| Transistor Material | Si |
| Drain-Source On-Volt | 50(V) |
| Operating Temp Range | -55C to 150C |
| Standard Package Name | SOT |
| Power Dissipation (Pd) | 300mW |
| Typical Fall Time (ns) | 7 |
| Typical Rise Time (ns) | 9 |
| Особенности | - |
| Continuous Drain Current | 0.2(A) |
| Transistor Configuration | Single |
| Gate-Source Voltage (Max) | ±20(V) |
| Maximum Power Dissipation | 360 mW |
| Typical Gate Charge @ Vgs | 1.7 nC @ 10 V |
| Total Gate Charge (Qg@Vgs) | 650pC |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Input Capacitance (Ciss@Vds) | 25pF |
| Maximum Drain Source Voltage | 50 V |
| Continuous Drain Current (Id) | 300mA |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Maximum Gate Threshold Voltage | 1.5V |
| Maximum Power Dissipation (mW) | 360 |
| Minimum Gate Threshold Voltage | 0.8V |
| Typical Gate Charge @ 10V (nC) | 1.7 |
| Typical Gate Charge @ Vgs (nC) | 1.7@10V |
| Maximum Drain Source Resistance | 3.5 Ω |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 13 |
| Typical Turn-On Delay Time (ns) | 2.5 |
| кол-во в упаковке | 3000 |
| Maximum Continuous Drain Current | 220 mA |
| Maximum Drain Source Voltage (V) | 50 |
| Typical Gate Plateau Voltage (V) | 2 |
| Typical Turn-Off Delay Time (ns) | 20 |
| Maximum Diode Forward Voltage (V) | 1.4 |
| Typical Diode Forward Voltage (V) | 0.8 |
| Typical Gate to Drain Charge (nC) | 0.4 |
| Maximum Gate Threshold Voltage (V) | 1.5 |
| Minimum Gate Threshold Voltage (V) | 0.8 |
| Typical Gate Threshold Voltage (V) | 1.3 |
| Typical Gate to Source Charge (nC) | 0.1 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 0.22 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Operating Temperature Classification | Military |
| Typical Input Capacitance @ Vds (pF) | 27@25V |
| Maximum Drain Source Resistance (mOhm) | 3500@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 2.2pF |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 0.88 |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 0.36 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 6@25V |
| Крутизна характеристики, S | 0.1 |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 0.22 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 350 |
| Пороговое напряжение на затворе | 0.8…1.5 В |
| Максимальное напряжение сток-исток Uси,В | 50 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 0.22 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 0.36 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |
| Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on) | 1.5Ω@10V, 500mA |