BSS127S-7, Транзистор N-MOSFET, полевой, 600В, 0,07А, 0,61/1,25Вт, SOT23
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- Код товара
- 8035454854
- Артикул
- BSS127S-7
- Бренд
- DIODES INC.
- HTS
- 8541.29.00.95
- Brand
- Diodes Incorporated
- Width
- 1.4mm
- Brand:
- Diodes Incorporated
Цена по запросу
(от 15 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор N-MOSFET, полевой, 600В, 0,07А, 0,61/1,25Вт, SOT23 Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| HTS | 8541.29.00.95 |
| Brand | Diodes Incorporated |
| Width | 1.4mm |
| Brand: | Diodes Incorporated |
| Series | BSS127 |
| Вид | MOSFET |
| Тип | полевой |
| EU RoHS | Compliant |
| Series: | BSS127 |
| Military | No |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Fall Time | 168 ns |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Rise Time | 7.2 ns |
| Automotive | No |
| Fall Time: | 168 ns |
| Lead Shape | Gull-wing |
| Rise Time: | 7.2 ns |
| Technology | Si |
| Вес, г | 0.01 |
| PCB changed | 3 |
| Part Status | Active |
| Subcategory | MOSFETs |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Manufacturer | Diodes Incorporated |
| Package Type | SOT-23 |
| Product Type | MOSFET |
| Subcategory: | MOSFETs |
| Корпус | sot23 |
| Channel Mode: | Enhancement |
| Configuration | Single |
| Manufacturer: | Diodes Incorporated |
| Mounting Type | Surface Mount |
| Package Width | 1.3 |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-23-3 |
| Package Height | 0.98 |
| Package Length | 2.9 |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-23-3 |
| Transistor Type | 1 N-Channel |
| Product Category | Power MOSFET |
| Supplier Package | SOT-23 |
| Transistor Type: | 1 N-Channel |
| Maximum IDSS (uA) | 0.1 |
| Product Category: | MOSFET |
| Number Of Channels | 1 Channel |
| Структура | MOSFET |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity | N-Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity | 3000 |
| Standard Package Name | SOT |
| Pd - Power Dissipation | 1.25 W |
| Typical Fall Time (ns) | 168 |
| Typical Rise Time (ns) | 7.2 |
| Особенности | - |
| Pd - Power Dissipation: | 1.25 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 1.25 W |
| Typical Gate Charge @ Vgs | 1.08 nC @ 10 V |
| Vgs - Gate-Source Voltage | 10 V |
| Typical Turn-On Delay Time | 5 ns |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-Off Delay Time | 28.7 ns |
| Typical Turn-On Delay Time: | 5 ns |
| Maximum Drain Source Voltage | 600 V |
| Typical Turn-Off Delay Time: | 28.7 ns |
| Id - Continuous Drain Current | 70 mA |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Id - Continuous Drain Current: | 70 mA |
| Maximum Gate Threshold Voltage | 4.5V |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 1250 |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ 10V (nC) | 1.08 |
| Typical Gate Charge @ Vgs (nC) | 1.08@10V |
| Maximum Drain Source Resistance | 190 Ω |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 5 |
| кол-во в упаковке | 3000 |
| Maximum Continuous Drain Current | 70 mA |
| Maximum Drain Source Voltage (V) | 600 |
| Rds On - Drain-Source Resistance | 160 Ohms |
| Typical Turn-Off Delay Time (ns) | 28.7 |
| Maximum Diode Forward Voltage (V) | 1.5 |
| Rds On - Drain-Source Resistance: | 160 Ohms |
| Maximum Gate Threshold Voltage (V) | 4.5 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 0.07 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 21.8@25V |
| Vds - Drain-Source Breakdown Voltage | 600 V |
| Vds - Drain-Source Breakdown Voltage: | 600 V |
| Maximum Drain Source Resistance (mOhm) | 160000@10V |
| Vgs Th - Gate-Source Threshold Voltage | 3 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Пороговое напряжение на затворе | 1…2.5 В |
| Максимальное напряжение сток-исток Uси,В | 600 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 0.07 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 1.25 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |