BSS123W-7-F, Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-323 T/R
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- Код товара
- 8001173122
- Артикул
- BSS123W-7-F
- Бренд
- DIODES INC.
- HTS
- 8541.29.00.95
- ECCN
- EAR99
- HTSUS
- 8541.21.0095
- Width
- 1.35mm
Цена по запросу
(от 12 ₽)
Минимальный заказ: 3000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор N-MOSFET, полевой, 100В, 0,17А, 200мВт, SOT323 Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| HTS | 8541.29.00.95 |
| ECCN | EAR99 |
| HTSUS | 8541.21.0095 |
| Width | 1.35mm |
| EU RoHS | Compliant |
| Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
| FET Type | N-Channel |
| Military | No |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Vgs (Max) | В±20V |
| Automotive | No |
| Lead Shape | Gull-wing |
| Technology | MOSFET (Metal Oxide) |
| Вес, г | 1 |
| PCB changed | 3 |
| Part Status | Active |
| RoHS Status | ROHS3 Compliant |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | SOT-323 |
| REACH Status | REACH Unaffected |
| Корпус | sot-323 |
| Configuration | Single |
| Mounting Type | Surface Mount |
| Package Width | 1.3 |
| Package / Case | SC-70, SOT-323 |
| Package Height | 0.95 |
| Package Length | 2.15 |
| Product Category | Small Signal |
| Supplier Package | SOT-323 |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Структура | N-Channel |
| Base Product Number | BSS123 -> |
| Transistor Material | Si |
| Transistor Polarity | N Channel |
| Operating Temperature | -55В°C ~ 150В°C (TJ) |
| Standard Package Name | SOT |
| Rds On (Max) @ Id, Vgs | 6Ohm @ 170mA, 10V |
| Typical Fall Time (ns) | 16(Max) |
| Typical Rise Time (ns) | 8(Max) |
| Особенности | - |
| Power Dissipation (Max) | 200mW (Ta) |
| Supplier Device Package | SOT-323 |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 200 mW |
| Vgs - Gate-Source Voltage | 2V @ 1mA |
| Supplier Temperature Grade | Automotive |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 100 V |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Drain to Source Voltage (Vdss) | 100V |
| Maximum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation (mW) | 200 |
| Maximum Drain Source Resistance | 10 Ω |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 8(Max) |
| кол-во в упаковке | 3000 |
| Maximum Continuous Drain Current | 170 mA |
| Maximum Drain Source Voltage (V) | 100 |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Rds On - Drain-Source Resistance | 6О© @ 170mA,10V |
| Typical Turn-Off Delay Time (ns) | 13(Max) |
| Power Dissipation-Max (Ta=25В°C) | 200mW |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Input Capacitance (Ciss) (Max) @ Vds | 60pF @ 25V |
| Maximum Continuous Drain Current (A) | 0.17 |
| Typical Input Capacitance @ Vds (pF) | 29@25V |
| Vds - Drain-Source Breakdown Voltage | 100V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Maximum Drain Source Resistance (mOhm) | 6000@10V |
| Continuous Drain Current (Id) @ 25В°C | 170mA |
| Current - Continuous Drain (Id) @ 25В°C | 170mA (Ta) |
| Пороговое напряжение на затворе | 0.8…2 В |
| Максимальное напряжение сток-исток Uси,В | 100 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 0.17 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 123 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |