BSS123NH6327XTSA1 LPF INF
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- Код товара
- 8072246252
- Артикул
- BSS123NH6327XTSA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- RoHS
- Details
- Type
- Small Signal
- Brand
- Infineon Technologies
- Width
- 1.3 mm
Цена по запросу
(от 14 ₽)
Минимальный заказ: 139 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH 100V 0.19A Автомобильный 3-контактный SOT-23 T/R
Технические параметры
| RoHS | Details |
| Type | Small Signal |
| Brand | Infineon Technologies |
| Width | 1.3 mm |
| Height | 1.1 mm |
| Length | 2.9 mm |
| Series | BSS123 |
| Вид | N-MOSFET |
| Тип | полевой |
| Version | N channel |
| Assembly | SMD |
| Mounting | Surface Mount |
| Polarity | N |
| Enclosure | SOT-23 |
| Fall Time | 22 ns |
| Packaging | Reel |
| Pin Count | 3 |
| Rise Time | 3.2 ns |
| Power loss | 0.5 W |
| Technology | Si |
| Вес, г | 1 |
| Channel Mode | Enhancement |
| Manufacturer | Infineon |
| Max. current | 0.19 mA |
| Package Type | SOT-23 |
| Rad Hardened | No |
| max. Voltage | 100 V |
| Монтаж | SMD |
| Configuration | 1 N-Channel |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-23-3 |
| Part # Aliases | BSS123NH6327XT BSS123NH6327XTSA1 SP000870646 |
| Transistor Type | 1 N-Channel |
| Product Category | MOSFET |
| Qg - Gate Charge | 900 pC |
| Power Dissipation | 0.5(W) |
| Number of Channels | 1 Channel |
| Number of Elements | 1 |
| Transistor Polarity | N-Channel |
| Drain-Source On-Volt | 100(V) |
| Operating Temp Range | -55C to 150C |
| Factory Pack Quantity | 15000 |
| Ток стока, А | 0.19 |
| Pd - Power Dissipation | 500 mW |
| Мощность, Вт | 0.5 |
| Continuous Drain Current | 0.19(A) |
| Gate Charge Qg @10V (nC) | 6x10<sup>-10</sup> C |
| Gate-Source Voltage (Max) | '±20(V) |
| Vgs - Gate-Source Voltage | 20 V |
| Typical Turn-On Delay Time | 2.3 ns |
| max. operating temperature | 150 °C |
| min. operating temperature | -55 °C |
| Typical Turn-Off Delay Time | 7.4 ns |
| Id - Continuous Drain Current | 190 mA |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Forward Transconductance - Min | 410 mS |
| Rds On - Drain-Source Resistance | 2.4 Ohms |
| Operating Temperature Classification | Military |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Vgs th - Gate-Source Threshold Voltage | 800 mV |
| Напряжение сток-исток, В | 100 |
| Сопротивление в открытом состоянии, Ом | 10 |