BSS123, Транзистор N-MOSFET, полевой, logic level, 100В, 170мА, 360мВт
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8062040364
- Артикул
- BSS123
- Бренд
- ON Semiconductor***
- RoHS
- Details
- Type
- FET
- Brand
- ON Semiconductor/Fairchild
- Width
- 1.3 mm
Цена по запросу
(от 12 ₽)
Минимальный заказ: 3000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
ON Semi предлагает обширный ассортимент устройств на МОП-транзистораx, который включает в себя высоковольтные (>250 В) и низковольтные (<250 В) типы.
Технические параметры
| RoHS | Details |
| Type | FET |
| Brand | ON Semiconductor/Fairchild |
| Width | 1.3 mm |
| Height | 1.2 mm |
| Length | 2.9 mm |
| Series | BSS123 |
| Product | MOSFET Small Signal |
| Version | N channel |
| Assembly | SMD |
| Enclosure | SOT-23 |
| Fall Time | 9 ns |
| Packaging | Reel |
| Pin Count | 3 |
| Rise Time | 9 ns |
| Power loss | 360 mW |
| Technology | Si |
| Вес, г | 0.02 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Manufacturer | ON Semiconductor |
| Max. current | 170 A |
| Package Type | SOT-23 |
| max. Voltage | 100 V |
| Configuration | Single |
| Mounting Type | Surface Mount |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-23-3 |
| Part # Aliases | BSS123_NL |
| Transistor Type | 1 N-Channel |
| Product Category | MOSFET |
| Number of Channels | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity | N-Channel |
| Factory Pack Quantity | 3000 |
| Pd - Power Dissipation | 360 mW |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 360 mW |
| Typical Gate Charge @ Vgs | 1.8 nC @ 10 V |
| Vgs - Gate-Source Voltage | 20 V |
| Typical Turn-On Delay Time | 1.7 ns |
| min. operating temperature | -55 °C |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-Off Delay Time | 17 ns |
| Maximum Drain Source Voltage | 100 V |
| Id - Continuous Drain Current | 170 mA |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Forward Transconductance - Min | 0.8 S |
| Maximum Gate Threshold Voltage | 2V |
| Minimum Gate Threshold Voltage | 0.8V |
| Maximum Drain Source Resistance | 6 Ω |
| Maximum Continuous Drain Current | 170 mA |
| Rds On - Drain-Source Resistance | 6 Ohms |
| Vds - Drain-Source Breakdown Voltage | 100 V |