BSS119NH6327XTSA1, Транзистор: N-MOSFET, полевой, 100В, 0,19А, 0,5Вт, SOT23
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8043236908
- Артикул
- BSS119NH6327XTSA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- PPAP
- Unknown
- RoHS
- Details
- Brand
- Infineon Technologies
- V(DS)
- 100 V
Цена по запросу
(от 11 ₽)
Минимальный заказ: 100 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Infineon предлагает большой и всесторонний ассортимент устройств на МОП-транзистораx, который включает семейства CoolMOS, OptiMOS и StrongIRFET.
Технические параметры
| PPAP | Unknown |
| RoHS | Details |
| Brand | Infineon Technologies |
| V(DS) | 100 V |
| Width | 1.3 mm |
| Height | 1.1 mm |
| Length | 2.9 mm |
| P(tot) | 0.5 W |
| Series | BSS119 |
| EU RoHS | Compliant |
| Package | SOT-23 |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Fall Time | 18.8 ns |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Rise Time | 3.3 ns |
| Automotive | Yes |
| Lead Shape | Gull-wing |
| Technology | Si |
| Вес, г | 0.03 |
| PCB changed | 3 |
| Part Status | Active |
| RoHS Status | RoHS-conform |
| Channel Mode | Enhancement |
| Channel Type | N |
| Manufacturer | Infineon |
| Package Type | SOT-23 |
| Configuration | Single |
| Mounting Type | Surface Mount |
| RDS(on)at 10V | 6000 mOhm |
| Fast bodydiode | NO |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-23-3 |
| Part # Aliases | BSS119N H6327 SP000870644 |
| I(D)at Tc=25°C | 0.19 A |
| Transistor Type | 1 N-Channel |
| Product Category | Small Signal |
| Qg - Gate Charge | 600 pC |
| Supplier Package | SOT-23 |
| Maximum IDSS (uA) | 0.01 |
| Number of Channels | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity | N-Channel |
| Factory Pack Quantity | 9000 |
| Standard Package Name | SOT-23 |
| Pd - Power Dissipation | 500 mW |
| Typical Fall Time (ns) | 18.8 |
| Typical Rise Time (ns) | 3.3 |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 500 mW |
| Typical Gate Charge @ Vgs | 0.6 nC @ 10 V |
| Vgs - Gate-Source Voltage | 20 V |
| Typical Turn-On Delay Time | 2.7 ns |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-Off Delay Time | 7 ns |
| Maximum Drain Source Voltage | 100 V |
| Id - Continuous Drain Current | 190 mA |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Forward Transconductance - Min | 350 mS |
| Maximum Gate Threshold Voltage | 2.3V |
| Maximum Power Dissipation (mW) | 500 |
| Minimum Gate Threshold Voltage | 1.3V |
| Typical Gate Charge @ 10V (nC) | 0.6 |
| Typical Gate Charge @ Vgs (nC) | 0.6 10V |
| Maximum Drain Source Resistance | 10 Ω |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 2.7 |
| Maximum Continuous Drain Current | 190 mA |
| Maximum Drain Source Voltage (V) | 100 |
| Rds On - Drain-Source Resistance | 2.406 Ohms |
| Typical Turn-Off Delay Time (ns) | 7 |
| Maximum Gate Threshold Voltage (V) | 2.3 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 0.19 |
| Typical Input Capacitance @ Vds (pF) | 15.7 25V |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Maximum Drain Source Resistance (mOhm) | 6000 10V |
| Vgs th - Gate-Source Threshold Voltage | 1.3 V |
| Maximum Gate Source Leakage Current (nA) | 10 |