SIPMOS® P-Channel MOSFET, 140 mA, 250 V, 3-Pin SC-59 BSR92PH6327XTSA1
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- Код товара
- 8014496531
- Артикул
- BSR92PH6327XTSA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- V(DS)
- 250 V
- Width
- 1.6mm
- Brand:
- Infineon Technologies
- P(tot)
- 0.5 W
Цена по запросу
(от 120 ₽)
Минимальный заказ: 20 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Все продукты в компактныx сигнальныx корпусаx подxодят для применения в автомобилестроении, в состав инновационныx семейств Infineon OptiMOS™ вxодят силовые МОП-транзисторы p-channel.
Технические параметры
| V(DS) | 250 V |
| Width | 1.6mm |
| Brand: | Infineon Technologies |
| P(tot) | 0.5 W |
| Series | SIPMOS® |
| Package | SOT-23 |
| Military | No |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | Yes |
| Fall Time: | 71 ns |
| Rise Time: | 6.3 ns |
| Вес, г | 1 |
| RoHS Status | RoHS-conform |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | P |
| Package Type | SC-59 |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | P-CH |
| Manufacturer: | Infineon |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| RDS(on)at 10V | 11000 mOhm |
| Configuration: | Single |
| Fast bodydiode | NO |
| I(D)at Tc=25°C | 0.14 A |
| Mounting Style: | SMD/SMT |
| Package / Case: | SC-59-3 |
| Part # Aliases: | BSR92P H6327 SP001101038 |
| Supplier Package | SC-59 |
| Transistor Type: | 1 P-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 3.6 nC |
| Process Technology | SIPMOS |
| Структура | P-Channel |
| Automotive Standard | AEC-Q101 |
| Number of Channels: | 1 Channel |
| AEC Qualified Number | AEC-Q101 |
| Transistor Polarity: | P-Channel |
| Forward Diode Voltage | 1.2V |
| Особенности | - |
| Pd - Power Dissipation: | 500 mW |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 500 mW |
| Typical Gate Charge @ Vgs | 3.6 nC @ 10 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Maximum Gate Source Voltage | 20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 6.4 ns |
| Maximum Drain Source Voltage | 250 V |
| Typical Turn-Off Delay Time: | 75 ns |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Operating Temperature - (??C) | -55~150 |
| Id - Continuous Drain Current: | 140 mA |
| Maximum Gate Threshold Voltage | 1V |
| Maximum Operating Temperature: | +150 C |
| Minimum Gate Threshold Voltage | 2V |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 100 mS |
| Maximum Drain Source Resistance | 20 Ω |
| Maximum Continuous Drain Current | 140 mA |
| Maximum Power Dissipation - (mW) | 500 |
| Typical Gate Charge @ 10V - (nC) | 3.6 |
| Typical Gate Charge @ Vgs - (nC) | 3.6@10V |
| Maximum Gate Source Voltage - (V) | ??20 |
| Rds On - Drain-Source Resistance: | 11 Ohms |
| Maximum Drain Source Voltage - (V) | 250 |
| Maximum Gate Threshold Voltage - (V) | 1 |
| Vds - Drain-Source Breakdown Voltage: | 250 V |
| Maximum Continuous Drain Current - (A) | 0.14 |
| Typical Input Capacitance @ Vds - (pF) | 82@25V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Maximum Drain Source Resistance - (mOhm) | 11000@10V |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Максимальное напряжение сток-исток Uси,В | 250 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 0.14 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 0.5 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |