BSP373NH6327XTSA1, Транзистор: N-MOSFET, полевой, 100В, 1,8А, 1,8Вт, SOT223
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8022464509
- Артикул
- BSP373NH6327XTSA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- RoHS
- Details
- Brand
- Infineon Technologies
- V(DS)
- 100 V
- Width
- 3.5 mm
Цена по запросу
(от 63,05 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор n-кан 100В 1,8A 1,8Вт 0,24Ом SOT223
Технические параметры
| RoHS | Details |
| Brand | Infineon Technologies |
| V(DS) | 100 V |
| Width | 3.5 mm |
| Height | 1.6 mm |
| Length | 6.5 mm |
| P(tot) | 1.8 W |
| Series | BSP373 |
| Package | SOT-223 |
| Fall Time | 13.5 ns |
| Packaging | Reel |
| Pin Count | 3 |
| Rise Time | 5.9 ns |
| Automotive | AEC-Q(101) |
| Technology | Si |
| Вес, г | 0.2 |
| RoHS Status | RoHS-conform |
| Channel Mode | Enhancement |
| Channel Type | N |
| Manufacturer | Infineon |
| Package Type | SOT-223 |
| Configuration | 1 N-Channel |
| Mounting Type | Surface Mount |
| RDS(on)at 10V | 300 mOhm |
| Fast bodydiode | NO |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-223-4 |
| Part # Aliases | BSP373NH6327XTSA1 SP001059328 |
| I(D)at Tc=25°C | 1.7 A |
| Transistor Type | 1 N-Channel |
| Product Category | MOSFET |
| Qg - Gate Charge | 9.3 nC |
| Number of Channels | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity | N-Channel |
| Factory Pack Quantity | 1000 |
| Pd - Power Dissipation | 1.8 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 1.8 W |
| Vgs - Gate-Source Voltage | 20 V |
| Typical Turn-On Delay Time | 4.6 ns |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-Off Delay Time | 21.9 ns |
| Maximum Drain Source Voltage | 100 V |
| Id - Continuous Drain Current | 1.8 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Forward Transconductance - Min | 3.23 S |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2.1V |
| Maximum Drain Source Resistance | 300 mΩ |
| Maximum Continuous Drain Current | 1.7 A |
| Rds On - Drain-Source Resistance | 177 mOhms |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Vgs th - Gate-Source Threshold Voltage | 2.1 V |