BSP372NH6327XTSA1, Транзистор: N-MOSFET, полевой, 100В, 1,8А, 1,8Вт, SOT223
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- Код товара
- 8070164981
- Артикул
- BSP372NH6327XTSA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- RoHS
- Details
- Brand
- Infineon Technologies
- V(DS)
- 100 V
- Width
- 3.5 mm
Цена по запросу
(от 70,90 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Infineon предлагает большой и всесторонний ассортимент устройств на МОП-транзистораx, который включает семейства CoolMOS, OptiMOS и StrongIRFET.
Технические параметры
| RoHS | Details |
| Brand | Infineon Technologies |
| V(DS) | 100 V |
| Width | 3.5 mm |
| Height | 1.6 mm |
| Length | 6.5 mm |
| P(tot) | 1.8 W |
| RDS-on | 230@10V mOhm |
| Series | BSP372 |
| Package | SOT-223 |
| Mounting | Surface Mount |
| Fall Time | 18 ns |
| Packaging | Cut Tape |
| Pin Count | 3 |
| Rise Time | 6.7 ns |
| Automotive | AEC-Q(101) |
| Technology | Si |
| Вес, г | 0.16 |
| Lead Finish | Tin |
| RoHS Status | RoHS-conform |
| Unit Weight | 0.003951 oz |
| Channel Mode | Enhancement |
| Channel Type | N |
| Manufacturer | Infineon |
| Package Type | SOT-223 |
| Configuration | Single |
| Mounting Type | Surface Mount |
| Qualification | AEC-Q100 |
| RDS(on)at 10V | 310 mOhm |
| Fast bodydiode | NO |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-223-4 |
| Part # Aliases | BSP372NH6327XTSA1 SP001059326 |
| I(D)at Tc=25°C | 1.7 A |
| Screening Level | Automotive |
| Transistor Type | 1 N-Channel |
| Product Category | MOSFET |
| Qg - Gate Charge | 14.3 nC |
| Typical Fall Time | 18 ns |
| Typical Rise Time | 6.7 ns |
| Number of Channels | 1 Channel |
| Max Processing Temp | 260 |
| Transistor Material | Si |
| Transistor Polarity | N-Channel |
| Factory Pack Quantity | 1000 |
| Forward Diode Voltage | 1.1V |
| Operating Temperature | -55 to 150 °C |
| Pd - Power Dissipation | 1.8 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 1.8 W |
| Typical Gate Charge @ Vgs | 9.5 nC @ 10 V |
| Vgs - Gate-Source Voltage | 20 V |
| Typical Turn-On Delay Time | 5.1 ns |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-Off Delay Time | 47.3 ns |
| Maximum Drain Source Voltage | 100 V |
| Id - Continuous Drain Current | 1.8 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Forward Transconductance - Min | 5.1 S |
| Maximum Gate Threshold Voltage | 1.8V |
| Minimum Gate Threshold Voltage | 0.8V |
| Maximum Drain Source Resistance | 270 mΩ |
| Maximum Continuous Drain Current | 1.8 A |
| Rds On - Drain-Source Resistance | 153 mOhms |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Vgs th - Gate-Source Threshold Voltage | 800 mV |