BSP317PH6327, Транзистор биполярный, стандартный
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8048295938
- Артикул
- BSP317PH6327
- Бренд
- INFINEON TECHNOLOGIES AG.
- Brand:
- Infineon Technologies
- Fall Time:
- 67 ns
- Rise Time:
- 11.1 ns
- Вес, г
- 0.27
Цена по запросу
(от 86,44 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Infineon Technologies |
| Fall Time: | 67 ns |
| Rise Time: | 11.1 ns |
| Вес, г | 0.27 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Infineon |
| Package/Case: | SOT-223-4 |
| Product Type: | MOSFET |
| Configuration: | Single |
| Qualification: | AEC-Q101 |
| Mounting Style: | SMD/SMT |
| Part # Aliases: | SP001058758 BSP317PH6327XTSA1 |
| Transistor Type: | 1 P-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 11.6 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | P-Channel |
| Factory Pack Quantity: | 1000 |
| Pd - Power Dissipation: | 1.8 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 5.7 ns |
| Typical Turn-Off Delay Time: | 254 ns |
| Id - Continuous Drain Current: | 430 mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 380 mS |
| Rds On - Drain-Source Resistance: | 3 Ohms |
| Vds - Drain-Source Breakdown Voltage: | 250 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.5 V |