BSP315PH6327XTSA1,Power MOSFET, P Channel, 60 V, 1.17 A, 0.5 ohm, SOT-223, Surface Mount
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8000714751
- Артикул
- BSP315PH6327XTSA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- V(DS)
- 60 V
- Width
- 3.5mm
- Brand:
- Infineon Technologies
- P(tot)
- 1.8 W
Цена по запросу
(от 179 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Малосигнальные P-канальные МОП-транзисторы Infineon SIPMOS® обладают рядом функций, которые могут включать режим усиления, постоянный ток разряда, иногда достигающий -80 А, а также широкий диапазон рабочиx температур.
Технические параметры
| V(DS) | 60 V |
| Width | 3.5mm |
| Brand: | Infineon Technologies |
| P(tot) | 1.8 W |
| Series | SIPMOS® |
| Package | SOT-223 |
| Series: | BSP315 |
| Military | No |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | Yes |
| Fall Time: | 19 ns |
| Rise Time: | 9 ns |
| Вес, г | 0.048 |
| RoHS Status | RoHS-conform |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | P |
| Package Type | SOT-223 |
| Subcategory: | MOSFETs |
| Корпус | SOT-223 |
| Channel Mode: | Enhancement |
| Configuration | P-CH |
| Manufacturer: | Infineon |
| Mounting Type | Surface Mount |
| Package/Case: | SOT-223-4 |
| Product Type: | MOSFET |
| RDS(on)at 10V | 800 mOhm |
| Configuration: | Single |
| Fast bodydiode | NO |
| Qualification: | AEC-Q101 |
| I(D)at Tc=25°C | 1.17 A |
| Mounting Style: | SMD/SMT |
| Part # Aliases: | BSP315P H6327 SP001058830 |
| Supplier Package | SOT-223 |
| Transistor Type: | 1 P-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 5.2 nC |
| Process Technology | SIPMOS |
| Структура | P-Channel |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity: | P-Channel |
| Standard Package Name | SOT |
| Особенности | - |
| Pd - Power Dissipation: | 1.8 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 1.8 W |
| Typical Gate Charge @ Vgs | 5.2 nC @ 10 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 24 ns |
| Maximum Drain Source Voltage | 60 V |
| Operating Temperature - (?C) | -55~150 |
| Typical Turn-Off Delay Time: | 32 ns |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 1.17 A |
| Maximum Gate Threshold Voltage | 2V |
| Maximum Operating Temperature: | +150 C |
| Minimum Gate Threshold Voltage | 1V |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 700 mS |
| Maximum Drain Source Resistance | 800 mΩ |
| Maximum Continuous Drain Current | 1.17 A |
| Maximum Power Dissipation - (mW) | 1800 |
| Typical Gate Charge @ 10V - (nC) | 5.2 |
| Typical Gate Charge @ Vgs - (nC) | 5.2@10V |
| Maximum Gate Source Voltage - (V) | ?20 |
| Rds On - Drain-Source Resistance: | 800 mOhms |
| Typical Output Capacitance - (pF) | 40 |
| Maximum Drain Source Voltage - (V) | 60 |
| Maximum Gate Threshold Voltage - (V) | 2 |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Maximum Continuous Drain Current - (A) | 1.17 |
| Typical Input Capacitance @ Vds - (pF) | 130@25V |
| Vgs th - Gate-Source Threshold Voltage: | 1.5 V |
| Maximum Drain Source Resistance - (mOhm) | 800@10V |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Пороговое напряжение на затворе | 2.5V@250uA |
| Максимальное напряжение сток-исток Uси,В | 60 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 1.17 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 1.8 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |
| Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on) | 0.5 Ом |