Транзистор BSP295H6327XTSA1
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8014701732
- Артикул
- BSP295H6327XTSA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- RoHS
- Details
- Brand
- Infineon Technologies
- Grade
- Automotive
- V(DS)
- 60 V
Цена по запросу
(от 73 ₽)
Минимальный заказ: 4 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Infineon предлагает большой и всесторонний ассортимент устройств на МОП-транзистораx, который включает семейства CoolMOS, OptiMOS и StrongIRFET.
Технические параметры
| RoHS | Details |
| Brand | Infineon Technologies |
| Grade | Automotive |
| V(DS) | 60 V |
| Width | 3.5mm |
| Brand: | Infineon Technologies |
| Height | 1.6 mm |
| Length | 6.5 mm |
| P(tot) | 1.8 W |
| Series | SIPMOS |
| Package | SOT-223 |
| Series: | BSP295 |
| FET Type | N-Channel |
| Fall Time | 19 ns |
| Packaging | Reel |
| Pin Count | 3 |
| Rise Time | 9.9 ns |
| Vgs (Max) | ±20V |
| Automotive | AEC-Q(101) |
| Fall Time: | 19 ns |
| Rise Time: | 9.9 ns |
| Technology | Si |
| Вес, г | 0.85 |
| RoHS Status | RoHS-conform |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Manufacturer | Infineon |
| Package Type | SOT-223 |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | 1 N-Channel |
| Manufacturer: | Infineon |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Qualification | AEC-Q101 |
| RDS(on)at 10V | 300 mOhm |
| Configuration: | Single |
| Fast bodydiode | NO |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-223-4 |
| Part # Aliases | BSP295 H6327 SP001058618 |
| Qualification: | AEC-Q101 |
| I(D)at Tc=25°C | 1.8 A |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-223-4 |
| Part # Aliases: | BSP295 H6327 SP001058618 |
| Transistor Type | 1 N-Channel |
| Product Category | MOSFET |
| Qg - Gate Charge | 17 nC |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 14 nC |
| Number of Channels | 1 Channel |
| Vgs(th) (Max) @ Id | 1.8V @ 400µA |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity | N-Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity | 1000 |
| Operating Temperature | -55°C ~ 150°C(TJ) |
| Pd - Power Dissipation | 1.8 W |
| Rds On (Max) @ Id, Vgs | 300mOhm @ 1.8A, 10V |
| Особенности | - |
| Pd - Power Dissipation: | 1.8 W |
| Power Dissipation (Max) | 1.8W(Ta) |
| Supplier Device Package | PG-SOT223-4 |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 1.8 W |
| Typical Gate Charge @ Vgs | 14 nC @ 10 V |
| Vgs - Gate-Source Voltage | 20 V |
| Typical Turn-On Delay Time | 5.4 ns |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-Off Delay Time | 27 ns |
| Typical Turn-On Delay Time: | 5.4 ns |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Maximum Drain Source Voltage | 60 V |
| Typical Turn-Off Delay Time: | 27 ns |
| Id - Continuous Drain Current | 1.8 A |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Drain to Source Voltage (Vdss) | 60 V |
| Forward Transconductance - Min | 800 mS |
| Id - Continuous Drain Current: | 1.8 A |
| Maximum Gate Threshold Voltage | 2V |
| Maximum Operating Temperature: | +150 C |
| Minimum Gate Threshold Voltage | 0.8V |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 0.8 S |
| Maximum Drain Source Resistance | 300 mΩ |
| Maximum Continuous Drain Current | 1.8 A |
| Rds On - Drain-Source Resistance | 220 mOhms |
| Rds On - Drain-Source Resistance: | 220 mOhms |
| Input Capacitance (Ciss) (Max) @ Vds | 368 pF @ 25 V |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs th - Gate-Source Threshold Voltage | 800 mV |
| Current - Continuous Drain (Id) @ 25°C | 1.8A(Ta) |
| Vgs th - Gate-Source Threshold Voltage: | 800 mV |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 1.8 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |