BSP171PH6327XTSA1, Транзистор МОП Транзистор P-МОП, полевой, 60В 1,9A 1,8Вт 0,3Ом SOT223
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- Код товара
- 8070232342
- Артикул
- BSP171PH6327XTSA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- RoHS
- Details
- Brand
- Infineon Technologies
- V(DS)
- 60 V
- Width
- 3.5 mm
Цена по запросу
(от 86,44 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Малосигнальные P-канальные МОП-транзисторы Infineon SIPMOS® обладают рядом функций, которые могут включать режим усиления, постоянный ток разряда, иногда достигающий -80 А, а также широкий диапазон рабочиx температур.
Технические параметры
| RoHS | Details |
| Brand | Infineon Technologies |
| V(DS) | 60 V |
| Width | 3.5 mm |
| Brand: | Infineon Technologies |
| Height | 1.6 mm |
| Length | 6.5 mm |
| P(tot) | 1.8 W |
| Series | BSP171 |
| Package | SOT-223 |
| Series: | BSP171 |
| Version | P-channel |
| Assembly | SMD |
| Enclosure | SOT-223 |
| Fall Time | 87 ns |
| Packaging | Reel |
| Pin Count | 3 |
| Rise Time | 25 ns |
| Automotive | AEC-Q(101) |
| Fall Time: | 87 ns |
| Rise Time: | 25 ns |
| Technology | Si |
| Вес, г | 0.16 |
| RoHS Status | RoHS-conform |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | P |
| Manufacturer | Infineon |
| Max. current | -1.9 A |
| Package Type | SOT-223 |
| Subcategory: | MOSFETs |
| max. Voltage | -60 V |
| Channel Mode: | Enhancement |
| Configuration | 1 P-Channel |
| Manufacturer: | Infineon |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| RDS(on)at 10V | 300 mOhm |
| Configuration: | Single |
| Fast bodydiode | NO |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-223-4 |
| Part # Aliases | BSP171PH6327XTSA1 SP001058824 |
| Qualification: | AEC-Q101 |
| I(D)at Tc=25°C | 1.9 A |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-223-4 |
| Part # Aliases: | BSP171P H6327 SP001058824 |
| Transistor Type | 1 P-Channel |
| Product Category | MOSFET |
| Qg - Gate Charge | -20 nC |
| Transistor Type: | 1 P-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 13 nC |
| Number of Channels | 1 Channel |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity | P-Channel |
| Transistor Polarity: | P-Channel |
| Factory Pack Quantity | 1000 |
| Pd - Power Dissipation | 1.8 W |
| Pd - Power Dissipation: | 1.8 W |
| Gate Charge Qg @10V (nC) | 1.3x10<sup>-8</sup> C |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 1.8 W |
| Typical Gate Charge @ Vgs | 13 nC @ 10 V |
| Vgs - Gate-Source Voltage | +/-20 V |
| Typical Turn-On Delay Time | 6 ns |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| max. operating temperature | 150 °C |
| min. operating temperature | -55 °C |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-Off Delay Time | 208 ns |
| Typical Turn-On Delay Time: | 6 ns |
| Maximum Drain Source Voltage | 60 V |
| Typical Turn-Off Delay Time: | 208 ns |
| Id - Continuous Drain Current | -1.9 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Forward Transconductance - Min | 1.4 S |
| Id - Continuous Drain Current: | 1.9 A |
| Maximum Gate Threshold Voltage | 2V |
| Maximum Operating Temperature: | +150 C |
| Minimum Gate Threshold Voltage | 1V |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 1.4 S |
| Maximum Drain Source Resistance | 300 mΩ |
| Maximum Continuous Drain Current | 1.9 A |
| Rds On - Drain-Source Resistance | 210 mOhms |
| Rds On - Drain-Source Resistance: | 300 mOhms |
| Vds - Drain-Source Breakdown Voltage | -60 V |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs th - Gate-Source Threshold Voltage | -2 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.5 V |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |