BSP170PH6327, 60V 1.9A 300mOhm@10V,1.9A 1.8W 4V@250uA P Channel SOT-223-4 MOSFETs
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- Код товара
- 8017594266
- Артикул
- BSP170PH6327
- Бренд
- INFINEON TECHNOLOGIES AG.
- RoHS
- Details
- Type
- 1PCSPChannel
- Brand
- Infineon Technologies
- V(DS)
- 60 V
Цена по запросу
(от 107,22 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET P-CH 60V 1.9A автомобильный 4-контактный (3+ вкладки) SOT-223 T/R
Технические параметры
| RoHS | Details |
| Type | 1PCSPChannel |
| Brand | Infineon Technologies |
| V(DS) | 60 V |
| Width | 3.5 mm |
| Brand: | Infineon Technologies |
| Height | 1.6 mm |
| Length | 6.5 mm |
| P(tot) | 1.8 W |
| Series | BSP170 |
| Package | SOT-223 |
| Series: | BSP170 |
| Fall Time | 60 ns |
| Packaging | Reel |
| Pin Count | 3 |
| Rise Time | 28 ns |
| Automotive | AEC-Q(101) |
| Fall Time: | 60 ns |
| Rise Time: | 28 ns |
| Technology | Si |
| Вес, г | 0.05 |
| RoHS Status | RoHS-conform |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | P |
| Manufacturer | Infineon |
| Package Type | SOT-223 |
| Subcategory: | MOSFETs |
| Корпус | SOT-223 |
| Channel Mode: | Enhancement |
| Configuration | 1 P-Channel |
| Manufacturer: | Infineon |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| RDS(on)at 10V | 300 mOhm |
| Configuration: | Single |
| Fast bodydiode | NO |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-223-4 |
| Part # Aliases | BSP170PH6327XTSA1 SP001058608 |
| Qualification: | AEC-Q101 |
| I(D)at Tc=25°C | 1.9 A |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-223-4 |
| Part # Aliases: | SP001058608 BSP170PH6327XTSA1 |
| Transistor Type | 1 P-Channel |
| Product Category | MOSFET |
| Qg - Gate Charge | -14 nC |
| Transistor Type: | 1 P-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 10 nC |
| Number of Channels | 1 Channel |
| Структура | P-Channel |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity | P-Channel |
| Transistor Polarity: | P-Channel |
| Factory Pack Quantity | 1000 |
| Pd - Power Dissipation | 1.8 W |
| Power Dissipation (Pd) | 1.8W |
| Особенности | - |
| Pd - Power Dissipation: | 1.8 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 1.8 W |
| Typical Gate Charge @ Vgs | 10 nC @ 10 V |
| Vgs - Gate-Source Voltage | +/-20 V |
| Typical Turn-On Delay Time | 14 ns |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-Off Delay Time | 92 ns |
| Typical Turn-On Delay Time: | 14 ns |
| Maximum Drain Source Voltage | 60 V |
| Typical Turn-Off Delay Time: | 92 ns |
| Continuous Drain Current (Id) | 1.9A |
| Id - Continuous Drain Current | -1.9 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Forward Transconductance - Min | 1.3 S |
| Id - Continuous Drain Current: | 1.9 A |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Operating Temperature: | +150 C |
| Minimum Gate Threshold Voltage | 2.1V |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 1.3 S |
| Maximum Drain Source Resistance | 300 mΩ |
| Maximum Continuous Drain Current | 1.9 A |
| Rds On - Drain-Source Resistance | 239 mOhms |
| Rds On - Drain-Source Resistance: | 239 mOhms |
| Vds - Drain-Source Breakdown Voltage | -60 V |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs th - Gate-Source Threshold Voltage | -4 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.1 V |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Пороговое напряжение на затворе | 4V@250uA |
| Максимальное напряжение сток-исток Uси,В | 60 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 1.9 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 1.8 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |
| Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on) | 300mΩ@10V, 1.9A |