BSP126.115, Транзистор: N-MOSFET
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- Код товара
- 8007382938
- Артикул
- BSP126.115
- Бренд
- Nexperia B.V.
- Width
- 3.7mm
- Brand:
- Nexperia
- Product:
- MOSFET Small Signal
- Pin Count
- 3
Цена по запросу
(от 480 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор: N-MOSFET, полевой, 250В, 0,375А, 1,5Вт, SOT223 Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| Width | 3.7mm |
| Brand: | Nexperia |
| Product: | MOSFET Small Signal |
| Pin Count | 3 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | SOT-223 |
| Subcategory: | MOSFETs |
| Вес, кг | 2.03 |
| Channel Mode: | Enhancement |
| Manufacturer: | Nexperia |
| Mounting Type | Surface Mount |
| Package/Case: | SOT-223-3 |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Part # Aliases: | 934000540115 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Структура | MOSFET |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity: | N-Channel |
| Особенности | - |
| Pd - Power Dissipation: | 1.5 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 1.5 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 250 V |
| Maximum Operating Temperature | +150 °C |
| Id - Continuous Drain Current: | 375 mA |
| Maximum Gate Threshold Voltage | 2V |
| Maximum Operating Temperature: | +150 C |
| Minimum Gate Threshold Voltage | 0.8V |
| Minimum Operating Temperature: | -55 C |
| Maximum Drain Source Resistance | 5 Ω |
| Maximum Continuous Drain Current | 375 mA |
| Rds On - Drain-Source Resistance: | 2.8 Ohms |
| Vds - Drain-Source Breakdown Voltage: | 250 V |
| Vgs th - Gate-Source Threshold Voltage: | 800 mV |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |