BSO150N03MDGXUMA1, Dual MOSFET, N Channel, 30 V, 30 V, 8 A, 8 A, 0.0125 ohm
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- Код товара
- 8545314703
- Артикул
- BSO150N03MDGXUMA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- PPAP
- No
- Brand:
- Infineon Technologies
- EU RoHS
- Compliant
- Mounting
- Surface Mount
Цена по запросу
(от 164 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH 30V 8A с 8-контактным разъемом DSO T/R
Технические параметры
| PPAP | No |
| Brand: | Infineon Technologies |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| Fall Time: | 4.2 ns, 4.2 ns |
| Lead Shape | Gull-wing |
| Rise Time: | 3.8 ns, 3.8 ns |
| Вес, г | 0.5 |
| PCB changed | 8 |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Subcategory: | Transistors |
| Channel Mode: | Enhancement |
| Configuration | Dual Dual Drain |
| Manufacturer: | Infineon |
| Package/Case: | SOIC-8 |
| Product Type: | MOSFETs |
| Configuration: | Dual |
| RoHS Compliant | Yes |
| Mounting Style: | SMD/SMT |
| Part # Aliases: | SP000447476 BSO15N3MDGXT BSO150N03MDGXUMA1 |
| Product Category | Power MOSFET |
| Supplier Package | DSO |
| Transistor Type: | 2 N-Channel |
| Product Category: | MOSFETs |
| Qg - Gate Charge: | 12.6 nC |
| Process Technology | OptiMOS |
| Структура | N-Channel |
| Moisture Sensitive: | Yes |
| Number of Channels: | 2 Channel |
| Transistor Polarity: | N-Channel |
| Standard Package Name | SOP |
| Factory Pack Quantity: | 2500 |
| Typical Fall Time (ns) | 4.2 |
| Typical Rise Time (ns) | 3.8 |
| Особенности | полевая сборка |
| Pd - Power Dissipation: | 2 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Number of Elements per Chip | 2 |
| Typical Turn-On Delay Time: | 7.3 ns, 7.3 ns |
| Typical Turn-Off Delay Time: | 8.7 ns, 8.7 ns |
| Id - Continuous Drain Current: | 9.3 A |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 1400 |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ 10V (nC) | 12.6 |
| Typical Gate Charge @ Vgs (nC) | 6.1 4.5V|12.6 10V |
| Forward Transconductance - Min: | 12 S, 12 S |
| Maximum Gate Source Voltage (V) | ±16 |
| Typical Turn-On Delay Time (ns) | 7.3 |
| Maximum Drain Source Voltage (V) | 30 |
| Typical Turn-Off Delay Time (ns) | 8.7 |
| Rds On - Drain-Source Resistance: | 14.6 mOhms |
| Maximum Gate Threshold Voltage (V) | 2 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 8 |
| Typical Input Capacitance @ Vds (pF) | 970 15V |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Maximum Drain Source Resistance (mOhm) | 15 10V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Максимальное напряжение сток-исток Uси,В | 30 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 8 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 1.4 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |
| Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on) | 0.0125 Ом |