BSL215CH6327XTSA1, Транзистор МОП n/Транзистор P-МОП, полевой, 20/-20В, 1,5/-1,5А, 0,5Вт PG-TSOP-6, TSOP6
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- Код товара
- 8070159941
- Артикул
- BSL215CH6327XTSA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- Case
- PG-TSOP-6
- PPAP
- Unknown
- Grade
- Automotive
- Width
- 1.6mm
Цена по запросу
(от 60,11 ₽)
Минимальный заказ: 5 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Infineon предлагает большой и всесторонний ассортимент устройств на МОП-транзистораx, который включает семейства CoolMOS, OptiMOS и StrongIRFET.
Технические параметры
| Case | PG-TSOP-6 |
| PPAP | Unknown |
| Grade | Automotive |
| Width | 1.6mm |
| Series | OptiMOS |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Automotive | Yes |
| Lead Shape | Gull-wing |
| Technology | OptiMOS™ 2 |
| Вес, г | 0.03 |
| FET Feature | Logic Level Gate, 2.5V Drive |
| PCB changed | 6 |
| Part Status | Active |
| Power - Max | 500mW |
| Channel Mode | Enhancement |
| Channel Type | N|P |
| Manufacturer | INFINEON TECHNOLOGIES |
| Package Type | TSOP-6 |
| Polarisation | unipolar |
| Configuration | Dual |
| Drain current | 1.5/-1.5A |
| Mounting Type | Surface Mount |
| Qualification | AEC-Q101 |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Kind of channel | enhanced |
| Product Category | Small Signal |
| Supplier Package | TSOP |
| Maximum IDSS (uA) | 1 |
| Power dissipation | 0.5W |
| Process Technology | OptiMOS 2|OptiMOS-P 2 |
| Type of transistor | N/P-MOSFET |
| Vgs(th) (Max) @ Id | 1.2V @ 3.7µA |
| Gate-source voltage | ±12V |
| On-state resistance | 0.173/0.25Ω |
| Transistor Material | Si |
| Drain-source voltage | 20/-20V |
| Forward Diode Voltage | 1.1V |
| Operating Temperature | -55°C ~ 150°C(TJ) |
| Standard Package Name | SOP |
| Rds On (Max) @ Id, Vgs | 140mOhm @ 1.5A, 4.5V |
| Typical Fall Time (ns) | 1.4@N Channel|14@P Channel |
| Typical Rise Time (ns) | 7.6@N Channel|9.7@P Channel |
| Supplier Device Package | PG-TSOP6-6 |
| Transistor Configuration | Isolated |
| Maximum Power Dissipation | 500 mW |
| Typical Gate Charge @ Vgs | 0.73 nC @ 4.5 V, 3 nC @ 5 V |
| Maximum Gate Source Voltage | -12 V, +12 V |
| Number of Elements per Chip | 2 |
| Gate Charge (Qg) (Max) @ Vgs | 0.73nC @ 4.5V |
| Maximum Drain Source Voltage | 20 V |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Drain to Source Voltage (Vdss) | 20V |
| Maximum Gate Threshold Voltage | 0.6 V, 1.2V |
| Maximum Power Dissipation (mW) | 500 |
| Minimum Gate Threshold Voltage | 0.7 V, 1.2V |
| Typical Gate Charge @ Vgs (nC) | 0.73@4.5V@N Channel|3@5V@P Channel |
| Maximum Drain Source Resistance | 250 mΩ, 280 mΩ |
| Maximum Gate Source Voltage (V) | ±12 |
| Typical Output Capacitance (pF) | 46@N Channel|110@P Channel |
| Typical Turn-On Delay Time (ns) | 4.1@N Channel|6.7@P Channel |
| Maximum Continuous Drain Current | 1.5 A |
| Maximum Drain Source Voltage (V) | 20 |
| Typical Turn-Off Delay Time (ns) | 6.8@N Channel|14.5@P Channel |
| Maximum Diode Forward Voltage (V) | 1.1 |
| Maximum Gate Threshold Voltage (V) | 1.2@N Channel|0.6@P Channel |
| Minimum Gate Threshold Voltage (V) | 0.7@N Channel|1.2@P Channel |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Input Capacitance (Ciss) (Max) @ Vds | 143pF @ 10V |
| Maximum Continuous Drain Current (A) | 1.5 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 110@10V@N Channel|270@10V@P Channel |
| Maximum Drain Source Resistance (mOhm) | 140@4.5V@N Channel|150@4.5V@P Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.5A |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Positive Gate Source Voltage (V) | 12 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 6 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 250 |