BSL207SP H6327, MOSFETs SMALL SIGNAL+P-CH
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8004635338
- Артикул
- BSL207SP H6327
- Бренд
- INFINEON TECHNOLOGIES AG.
- Brand:
- Infineon Technologies
- Series:
- BSL207
- Fall Time:
- 53 ns
- Rise Time:
- 17 ns
Цена по запросу
(от 93,73 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Infineon Technologies |
| Series: | BSL207 |
| Fall Time: | 53 ns |
| Rise Time: | 17 ns |
| Вес, г | 61 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Infineon |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | TSOP-6 |
| Part # Aliases: | SP001100650 BSL207SPH6327XTSA1 |
| Transistor Type: | 1 P-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 13.3 nC |
| Структура | MOSFET |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | P-Channel |
| Особенности | - |
| Pd - Power Dissipation: | 2 W |
| Vgs - Gate-Source Voltage: | -12 V, +12 V |
| Typical Turn-On Delay Time: | 9 ns |
| Typical Turn-Off Delay Time: | 42 ns |
| Id - Continuous Drain Current: | 6 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 7 S |
| Rds On - Drain-Source Resistance: | 43 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.2 V |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Пороговое напряжение на затворе | 0.8…2 В |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |