BSH205G2R, Транзистор: P-MOSFET, полевой, -20В, -1,2А, 890мВт, SOT23

Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8014887776
- Артикул
- BSH205G2R
- Бренд
- Nexperia B.V.
- RoHS
- Details
- Brand
- Nexperia
- Width
- 1.4mm
- Series
- BSH205G2
Цена по запросу
(от 30,69 ₽)
Минимальный заказ: 5 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
MOSFET, P-CH, -20V, -2A, TO236AB; Полярность транзистора: Канал P; Постоянный ток стока Id: -2A; Напряжение источника стока Vds: -20 В; Сопротивление включения Rds(on): 0,12 Ом; Тестовое напряжение Rds(on) Vgs: -4,5 В; Пороговое напряжение Vgs:-700 мВ
Технические параметры
| RoHS | Details |
| Brand | Nexperia |
| Width | 1.4mm |
| Series | BSH205G2 |
| Fall Time | 16 ns |
| Packaging | Reel |
| Pin Count | 3 |
| Rise Time | 14 ns |
| Technology | Si |
| Вес, г | 0.02 |
| Channel Mode | Enhancement |
| Channel Type | P |
| Manufacturer | Nexperia |
| Package Type | SOT-23 |
| Configuration | Single |
| Mounting Type | Surface Mount |
| Mounting Style | SMD/SMT |
| Transistor Type | 1 P-Channel |
| Product Category | MOSFET |
| Qg - Gate Charge | 3.7 nC |
| Number of Channels | 1 Channel |
| Automotive Standard | AEC-Q101 |
| Transistor Polarity | P-Channel |
| Factory Pack Quantity | 3000 |
| Forward Diode Voltage | 1.2V |
| Pd - Power Dissipation | 890 mW |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 6.25 W |
| Typical Gate Charge @ Vgs | 3.7 nC @-4.5 V |
| Vgs - Gate-Source Voltage | 8 V |
| Typical Turn-On Delay Time | 5 ns |
| Maximum Gate Source Voltage | -8 V, +8 V |
| Number of Elements per Chip | 1 |
| Typical Turn-Off Delay Time | 43 ns |
| Maximum Drain Source Voltage | 20 V |
| Id - Continuous Drain Current | -2.3 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Forward Transconductance - Min | 4.5 S |
| Maximum Gate Threshold Voltage | 0.95V |
| Minimum Gate Threshold Voltage | 0.45V |
| Maximum Drain Source Resistance | 170 mΩ |
| Maximum Continuous Drain Current | 2.3 A |
| Rds On - Drain-Source Resistance | 120 mOhms |
| Vds - Drain-Source Breakdown Voltage | -20 V |
| Vgs th - Gate-Source Threshold Voltage | -950 mV |