OptiMOS™ 3 N-Channel MOSFET, 42 A, 100 V, 8-Pin TDSON BSC160N10NS3GATMA1
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- Код товара
- 8066538067
- Артикул
- BSC160N10NS3GATMA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- Q(g)
- 25 nC
- V(DS)
- 100 V
- Width
- 6.35mm
- Brand:
- Infineon Technologies
Цена по запросу
(от 180 ₽)
Минимальный заказ: 5000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Infineon предлагает большой и всесторонний ассортимент устройств на МОП-транзистораx, который включает семейства CoolMOS, OptiMOS и StrongIRFET.
Технические параметры
| Q(g) | 25 nC |
| V(DS) | 100 V |
| Width | 6.35mm |
| Brand: | Infineon Technologies |
| P(tot) | 60 W |
| Series | OptiMOS 3 |
| Package | TDSON-8 |
| R(thJC) | 2.1 K/W |
| Series: | OptiMOS 3 |
| Mounting | SMD |
| Packaging | REEL |
| Pin Count | 8 |
| Automotive | NO |
| Fall Time: | 5 ns |
| Rise Time: | 15 ns |
| Technology | OptiMOS |
| Tradename: | OptiMOS |
| Вес, г | 1 |
| Logic level | YES |
| RoHS Status | RoHS-conform |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | TDSON |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | N-CH |
| Manufacturer: | Infineon |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| RDS(on)at 10V | 16 mOhm |
| Configuration: | Single |
| Fast bodydiode | NO |
| I(D)at Tc=25°C | 42 A |
| Mounting Style: | SMD/SMT |
| Package / Case: | TDSON-8 |
| Part # Aliases: | BSC160N10NS3 G SP000482382 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 25 nC |
| Структура | N-Channel |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity: | N-Channel |
| Особенности | - |
| Pd - Power Dissipation: | 60 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 60 W |
| Typical Gate Charge @ Vgs | 19 nC @ 10 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 13 ns |
| Maximum Drain Source Voltage | 100 V |
| Typical Turn-Off Delay Time: | 22 ns |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 42 A |
| Maximum Gate Threshold Voltage | 3.5V |
| Maximum Operating Temperature: | +150 C |
| Minimum Gate Threshold Voltage | 2V |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 21 S |
| Maximum Drain Source Resistance | 33 mΩ |
| Maximum Continuous Drain Current | 42 A |
| Rds On - Drain-Source Resistance: | 13.9 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Factory Pack Quantity: Factory Pack Quantity: | 5000 |
| Максимальное напряжение сток-исток Uси,В | 100 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 42 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 60 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |