BSC150N03LDGATMA1, Транзистор N-МОП, полевой, 30В, 20А, 26Вт, PG-TDSON-8
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- Код товара
- 8070095039
- Артикул
- BSC150N03LDGATMA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- RoHS
- Details
- Type
- 2 N-Channel
- Brand
- Infineon Technologies
- Width
- 5.15 mm
Цена по запросу
(от 75 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
30 В, 8 А, 26 Вт, 15 Мом при 20 А,10 В 2.2V@250uA 2 N-канальныx МОП-транзистора TDSON-8, соответствующие требованиям ROHS
Технические параметры
| RoHS | Details |
| Type | 2 N-Channel |
| Brand | Infineon Technologies |
| Width | 5.15 mm |
| Brand: | Infineon Technologies |
| Height | 1.27 mm |
| Length | 5.9 mm |
| Series | BSC150N03 |
| Fall Time | 2 ns, 2 ns |
| Packaging | Reel |
| Rise Time | 2.2 ns, 2.2 ns |
| Tradename | OptiMOS |
| Fall Time: | 2 ns |
| Rise Time: | 2.2 ns |
| Technology | Si |
| Вес, г | 0.44 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Manufacturer | Infineon |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | 2 N-Channel |
| Manufacturer: | Infineon |
| Package/Case: | TDSON-8 |
| Product Type: | MOSFET |
| Configuration: | Dual |
| Mounting Style | SMD/SMT |
| Package / Case | TDSON-8 |
| Part # Aliases | BSC150N03LD BSC150N03LDGXT G SP000359362 |
| Mounting Style: | SMD/SMT |
| Part # Aliases: | BSC150N03LD G SP000359362 |
| Transistor Type | 2 N-Channel |
| Product Category | MOSFET |
| Qg - Gate Charge | 13.2 nC, 13.2 nC |
| Transistor Type: | 2 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 13.2 nC |
| Number of Channels | 2 Channel |
| Number of Channels: | 2 Channel |
| Transistor Polarity | N-Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity | 5000 |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Factory Pack Quantity: | 5000 |
| Pd - Power Dissipation | 26 W |
| Power Dissipation (Pd) | 26W |
| Pd - Power Dissipation: | 26 W |
| Vgs - Gate-Source Voltage | 20 V, 20 V |
| Total Gate Charge (Qg@Vgs) | 13.2nC@10V |
| Typical Turn-On Delay Time | 2.7 ns, 2.7 ns |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-Off Delay Time | 12 ns, 12 ns |
| Typical Turn-On Delay Time: | 2.7 ns |
| Input Capacitance (Ciss@Vds) | 1.1nF@15V |
| Typical Turn-Off Delay Time: | 12 ns |
| Continuous Drain Current (Id) | 8A |
| Id - Continuous Drain Current | 20 A, 20 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Forward Transconductance - Min | 18 S, 18 S |
| Id - Continuous Drain Current: | 20 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 18 S |
| Rds On - Drain-Source Resistance | 12.5 mOhms, 12.5 mOms |
| Rds On - Drain-Source Resistance: | 12.5 mOhms |
| Vds - Drain-Source Breakdown Voltage | 30 V, 30 V |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs th - Gate-Source Threshold Voltage | 1 V, 1 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |