BSC12DN20NS3 G, 200V 125m @10V,5.7A 50W 1 N-Channel TDSON-8-EP(5x6) MOSFETs ROHS
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8048310117
- Артикул
- BSC12DN20NS3 G
- Бренд
- INFINEON TECHNOLOGIES AG.
- Brand:
- Infineon Technologies
- Series:
- OptiMOS 3
- Fall Time:
- 3 ns
- Rise Time:
- 4 ns
Цена по запросу
(от 217 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Infineon Technologies |
| Series: | OptiMOS 3 |
| Fall Time: | 3 ns |
| Rise Time: | 4 ns |
| Tradename: | OptiMOS |
| Вес, г | 1 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Infineon |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | TDSON-8 |
| Part # Aliases: | SP000781774 BSC12DN20NS3GATMA1 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 8.7 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Pd - Power Dissipation: | 50 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 6 ns |
| Typical Turn-Off Delay Time: | 10 ns |
| Id - Continuous Drain Current: | 11.3 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 6 S |
| Rds On - Drain-Source Resistance: | 108 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 200 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Factory Pack Quantity: Factory Pack Quantity: | 5000 |