BSC120N03MSGATMA1, Транзистор N-МОП, полевой, 30В, 36А, 28Вт, PG-TDSON-8
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8070139444
- Артикул
- BSC120N03MSGATMA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- Brand:
- Infineon Technologies
- Fall Time:
- 5 ns
- Rise Time:
- 4.4 ns
- Вес, г
- 0.23
Цена по запросу
(от 77,51 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Infineon Technologies |
| Fall Time: | 5 ns |
| Rise Time: | 4.4 ns |
| Вес, г | 0.23 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Infineon |
| Package/Case: | TDSON-8 |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Part # Aliases: | BSC120N03MS G SP000311516 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 20 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity: | 5000 |
| Pd - Power Dissipation: | 28 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 7.9 ns |
| Typical Turn-Off Delay Time: | 7 ns |
| Id - Continuous Drain Current: | 39 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 25 S |
| Rds On - Drain-Source Resistance: | 10 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |