BSC120N03LSGATMA1, Транзистор: N-MOSFET, полевой, 30В, 33А, 28Вт, PG-TOSON-8
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8070122888
- Артикул
- BSC120N03LSGATMA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- Brand:
- Infineon Technologies
- Series:
- OptiMOS 3
- Fall Time:
- 2.2 ns
- Rise Time:
- 2.2 ns
Цена по запросу
(от 62,56 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Infineon Technologies |
| Series: | OptiMOS 3 |
| Fall Time: | 2.2 ns |
| Rise Time: | 2.2 ns |
| Tradename: | OptiMOS |
| Вес, г | 0.5 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Infineon |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | TDSON-8 |
| Part # Aliases: | BSC120N03LS G SP000302848 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 15 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Pd - Power Dissipation: | 28 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 2.7 ns |
| Typical Turn-Off Delay Time: | 12 ns |
| Id - Continuous Drain Current: | 39 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 25 S |
| Rds On - Drain-Source Resistance: | 10 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Factory Pack Quantity: Factory Pack Quantity: | 5000 |