BSC100N10NSFGATMA1,Power MOSFET, N Channel, 100 V, 90 A, 0.0077 ohm, TDSON, Surface Mount
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8001897510
- Артикул
- BSC100N10NSFGATMA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- HTS
- COMPONENTS
- PPAP
- Unknown
- SVHC
- Yes
- EU RoHS
- Compliant with Exemption
Цена по запросу
(от 364 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| HTS | COMPONENTS |
| PPAP | Unknown |
| SVHC | Yes |
| EU RoHS | Compliant with Exemption |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | Unknown |
| Lead Shape | No Lead |
| Вес, г | 0.3 |
| PCB changed | 8 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Quad Drain Triple Source |
| Package Width | 5.9 |
| Package Height | 1 |
| Package Length | 5.15 |
| Product Category | Power MOSFET |
| Supplier Package | TDSON EP |
| Структура | N-Channel |
| Standard Package Name | SON |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 7 |
| Typical Rise Time (ns) | 23 |
| Особенности | - |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 156000 |
| Typical Gate Charge @ 10V (nC) | 33 |
| Typical Gate Charge @ Vgs (nC) | 33@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 18 |
| Maximum Drain Source Voltage (V) | 100 |
| Typical Turn-Off Delay Time (ns) | 26 |
| Maximum Gate Threshold Voltage (V) | 4 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 11.4 |
| Typical Input Capacitance @ Vds (pF) | 2200@50V |
| Maximum Drain Source Resistance (MOhm) | 10@10V |
| Максимальное напряжение сток-исток Uси,В | 100 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 90 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |
| Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on) | 0.0077 Ом |