BSC100N06LS3GATMA1,Power MOSFET, N Channel, 60 V, 50 A, 0.0078 ohm, SuperSOT, Surface Mount
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- Код товара
- 8372292082
- Артикул
- BSC100N06LS3GATMA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- Case
- PG-TDSON-8
- Width
- 6.1mm
- Brand:
- Infineon Technologies
- Series
- OptiMOS™ 3
Цена по запросу
(от 134 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Продукция OptiMOS™ выпускается в высокопроизводительныx комплектацияx для решения самыx сложныx задач, обеспечивая полную гибкость в условияx ограниченного пространства.
Технические параметры
| Case | PG-TDSON-8 |
| Width | 6.1mm |
| Brand: | Infineon Technologies |
| Series | OptiMOS™ 3 |
| Series: | OptiMOS 3 |
| Mounting | SMD |
| Pin Count | 8 |
| Fall Time: | 8 ns |
| Rise Time: | 58 ns |
| Technology | OptiMOS™ 3 |
| Tradename: | OptiMOS |
| Вес, г | 0.19 |
| Gate charge | 45nC |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Manufacturer | INFINEON TECHNOLOGIES |
| Package Type | TDSON |
| Polarisation | unipolar |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Drain current | 36A |
| Manufacturer: | Infineon |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Single |
| Kind of channel | enhanced |
| Mounting Style: | SMD/SMT |
| Package / Case: | TDSON-8 |
| Part # Aliases: | BSC100N06LS3 G SP000453664 |
| Transistor Type: | 1 N-Channel |
| Power dissipation | 50W |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 34 nC |
| Type of transistor | N-MOSFET |
| Структура | N-Channel |
| Gate-source voltage | ±20V |
| Number of Channels: | 1 Channel |
| On-state resistance | 10mΩ |
| Drain-source voltage | 60V |
| Pulsed drain current | 200A |
| Transistor Polarity: | N-Channel |
| Особенности | - |
| Pd - Power Dissipation: | 50 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 50 W |
| Typical Gate Charge @ Vgs | 34 nC @ 10 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 8 ns |
| Maximum Drain Source Voltage | 60 V |
| Typical Turn-Off Delay Time: | 19 ns |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 50 A |
| Maximum Gate Threshold Voltage | 2.2V |
| Maximum Operating Temperature: | +150 C |
| Minimum Gate Threshold Voltage | 1.2V |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 32 S |
| Maximum Drain Source Resistance | 17.9 mΩ |
| Maximum Continuous Drain Current | 50 A |
| Features of semiconductor devices | logic level |
| Rds On - Drain-Source Resistance: | 10 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.2 V |
| Factory Pack Quantity: Factory Pack Quantity: | 5000 |
| Максимальное напряжение сток-исток Uси,В | 60 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 50 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 50 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |
| Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on) | 0.0078 Ом |