BSC097N06NSATMA1, Trans MOSFET N-CH 60V 13A 8-Pin TDSON EP T/R
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8002180444
- Артикул
- BSC097N06NSATMA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- PPAP
- No
- Q(g)
- 12 nC
- V(DS)
- 60 V
- Width
- 6.1mm
Цена по запросу
(от 350 ₽)
Минимальный заказ: 110 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH 60V 12A 8-контактный TDSON EP T/R
Технические параметры
| PPAP | No |
| Q(g) | 12 nC |
| V(DS) | 60 V |
| Width | 6.1mm |
| P(tot) | 36 W |
| Series | OptiMOS |
| EU RoHS | Compliant with Exemption |
| Package | TDSON-8 |
| R(thJC) | 3.5 K/W |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | No Lead |
| Technology | OptiMOS |
| Вес, г | 1 |
| Logic level | NO |
| PCB changed | 8 |
| Part Status | Active |
| RoHS Status | RoHS-conform |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | TDSON |
| Configuration | Single Quad Drain Triple Source |
| Mounting Type | Surface Mount |
| RDS(on)at 10V | 9.7 mOhm |
| Fast bodydiode | NO |
| I(D)at Tc=25°C | 46 A |
| Product Category | Power MOSFET |
| Supplier Package | TDSON EP |
| Maximum IDSS (uA) | 1 |
| Process Technology | OptiMOS |
| Структура | N-Channel |
| Transistor Material | Si |
| Forward Diode Voltage | 1.2V |
| Standard Package Name | SON |
| Typical Fall Time (ns) | 2 |
| Typical Rise Time (ns) | 2 |
| Особенности | - |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 36 W |
| Typical Gate Charge @ Vgs | 12 nC @ 10 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 60 V |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Maximum Gate Threshold Voltage | 3.3V |
| Maximum Power Dissipation (mW) | 2500 |
| Minimum Gate Threshold Voltage | 2.1V |
| Typical Gate Charge @ 10V (nC) | 12 |
| Typical Gate Charge @ Vgs (nC) | 12 10V |
| Maximum Drain Source Resistance | 14.6 mΩ |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 6 |
| Maximum Continuous Drain Current | 46 A |
| Maximum Drain Source Voltage (V) | 60 |
| Typical Turn-Off Delay Time (ns) | 10 |
| Maximum Gate Threshold Voltage (V) | 3.3 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 12 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 860 30V |
| Maximum Drain Source Resistance (mOhm) | 9.7 10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Пороговое напряжение на затворе | -20 V, +20 V |
| Максимальное напряжение сток-исток Uси,В | 60 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 13 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |