BSC0925ND, 30V 40A 30W 4.2m @10V,20A 2 N-Channel TISON-8-EP(6x5) Single FETs, MOSFETs RoHS
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8055395684
- Артикул
- BSC0925ND
- Бренд
- INFINEON TECHNOLOGIES AG.
- Brand:
- Infineon Technologies
- Military
- No
- Packaging
- Tape and Reel
- Pin Count
- 8
Цена по запросу
(от 223 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
МОП-ТРАНЗИСТОР N-Ch 30V 40A TISON-8
Технические параметры
| Brand: | Infineon Technologies |
| Military | No |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| Fall Time: | 3 ns, 3 ns |
| Rise Time: | 3.8 ns, 3.8 ns |
| Вес, г | 0.18 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Dual |
| Manufacturer: | Infineon |
| Package/Case: | TISON-8 |
| Product Type: | MOSFET |
| Configuration: | Dual |
| Mounting Style: | SMD/SMT |
| Part # Aliases: | BSC925NDXT SP000934752 BSC0925NDATMA1 |
| Supplier Package | TISON EP |
| Transistor Type: | 2 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 17 nC |
| Number of Channels: | 2 Channel |
| Transistor Polarity: | N-Channel |
| Standard Package Name | SON |
| Factory Pack Quantity: | 5000 |
| Pd - Power Dissipation: | 30 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Number of Elements per Chip | 2 |
| Typical Turn-On Delay Time: | 4.7 ns, 4.7 ns |
| Typical Turn-Off Delay Time: | 17 ns, 17 ns |
| Operating Temperature - (??C) | -55~150 |
| Id - Continuous Drain Current: | 40 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 38 S, 38 S |
| Maximum Power Dissipation - (mW) | 2500 |
| Typical Gate Charge @ 10V - (nC) | 13 |
| Typical Gate Charge @ Vgs - (nC) | 6.7@4.5VI13@10V |
| Maximum Gate Source Voltage - (V) | ??20 |
| Rds On - Drain-Source Resistance: | 4.2 mOhms, 4.2 mOhms |
| Maximum Drain Source Voltage - (V) | 30 |
| Maximum Gate Threshold Voltage - (V) | 2 |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Maximum Continuous Drain Current - (A) | 15 |
| Typical Input Capacitance @ Vds - (pF) | 870@15V |
| Vgs th - Gate-Source Threshold Voltage: | 1.2 V |
| Maximum Drain Source Resistance - (mOhm) | 4.5@10V |