BSC077N12NS3GATMA1, Trans MOSFET N-CH 120V 13.4A 8-Pin TDSON EP T/R
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8001490593
- Артикул
- BSC077N12NS3GATMA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- Width
- 6.1mm
- Brand:
- Infineon Technologies
- Series
- OptiMOS 3
- Series:
- OptiMOS 3
Цена по запросу
(от 348 ₽)
Минимальный заказ: 54 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Infineon предлагает большой и всесторонний ассортимент устройств на МОП-транзистораx, который включает семейства CoolMOS, OptiMOS и StrongIRFET.
Технические параметры
| Width | 6.1mm |
| Brand: | Infineon Technologies |
| Series | OptiMOS 3 |
| Series: | OptiMOS 3 |
| Pin Count | 8 |
| Fall Time: | 7 ns |
| Rise Time: | 8 ns |
| Tradename: | OptiMOS |
| Вес, г | 1 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | TDSON |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Infineon |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | TDSON-8 |
| Part # Aliases: | BSC077N12NS3 G SP000652750 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 66 nC |
| Структура | N-Channel |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Особенности | - |
| Pd - Power Dissipation: | 139 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 139 W |
| Typical Gate Charge @ Vgs | 66 nC @ 10 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 15 ns |
| Maximum Drain Source Voltage | 120 V |
| Typical Turn-Off Delay Time: | 26 ns |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 98 A |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Operating Temperature: | +150 C |
| Minimum Gate Threshold Voltage | 2V |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 40 S |
| Maximum Drain Source Resistance | 7.7 mΩ |
| Maximum Continuous Drain Current | 98 A |
| Rds On - Drain-Source Resistance: | 7.7 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 120 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Factory Pack Quantity: Factory Pack Quantity: | 5000 |
| Пороговое напряжение на затворе | -20 V, +20 V |
| Максимальное напряжение сток-исток Uси,В | 120 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 13.4 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |